3SK291(TE85L) datasheet, PDF - EEWORLD Datasheet

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3SK291(TE85L): DescriptionTRANSISTOR,MOSFET,N-CHANNEL,12.5V V(BR)DSS,30MA I(D),SOT-143R; CategoryDiscrete semiconductor The transistor; File Size335KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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3SK291(TE85L) Overview

TRANSISTOR,MOSFET,N-CHANNEL,12.5V V(BR)DSS,30MA I(D),SOT-143R

3SK291(TE85L) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	125 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.15 W
surface mount	YES
Base Number Matches	1

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3SK291

TOSHIBA Field Effect Transistor

Silicon N-Channel Dual Gate MOS Type

3SK291

TV Tuner, UHF RF Amplifier Applications

•

Superior cross modulation performance

Low reverse transfer capacitance: C

rss

= 0.016 pF (typ.)

Low noise figure: NF = 1.5dB (typ.)

Unit: mm

Absolute Maximum Ratings

(Ta

25°C)

Characteristics

Drain-source voltage

Gate 1-source voltage

Gate 2-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Symbol

G1S

G2S

stg

Rating

12.5

±8

150

125

−55~125

Unit

°C

JEDEC

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

JEITA

―

temperature, etc.) may cause this product to decrease in the

TOSHIBA

2-3J1A

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

Weight: 0.013 g (typ.)

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

(Ta

25°C)

Characteristics

Gate 1 leakage current

Gate 2 leakage current

Drain-source voltage

Drain current

Gate 1-source cut-off voltage

Gate 2-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

Symbol

G1SS

G2SS

(BR) DSX

DSS

G1S (OFF)

G2S (OFF)

⎪Y

⎪

iss

rss

Test Condition

0, V

G1S

= ±6

V, V

G2S

0, V

G1S

0, V

G2S

= ±6

G1S

= −0.5

V, V

G2S

= −0.5

100

μA

6 V, V

G1S

0, V

G2S

4.5 V

6 V, V

G2S

4.5 V, I

100

μA

6 V, V

G1S

4.0 V, I

100

μA

6 V, V

G2S

4.5 V, I

10 mA,

1 kHz

6 V, V

G2S

4.5 V, I

10 mA,

1 MHz

6 V, V

G2S

4.5 V, I

10 mA,

800 MHz (Figure 1)

Min

⎯

12.5

⎯

0.3

0.5

⎯

Typ.

⎯

0.8

1.0

2.0

22.5

1.5

Max

±50

⎯

0.1

1.3

1.5

⎯

2.6

⎯

2.5

Unit

2007-11-01

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