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JANS4N23AU

Description
Transistor Output Optocoupler, 1-Element, 1000V Isolation, SURFACE MOUNT PACKAGE-6
CategoryLED optoelectronic/LED    photoelectric   
File Size81KB,17 Pages
ManufacturerMicropac
Websitehttp://www.micropac.com
Download Datasheet Parametric View All

JANS4N23AU Overview

Transistor Output Optocoupler, 1-Element, 1000V Isolation, SURFACE MOUNT PACKAGE-6

JANS4N23AU Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSURFACE MOUNT PACKAGE-6
Reach Compliance Codeunknown
Coll-Emtr Bkdn Voltage-Min35 V
ConfigurationSINGLE
Current transmission ratio - minimum value80%
Nominal current transfer ratio60%
Maximum forward current0.04 A
Maximum forward voltage1.3 V
Maximum insulation voltage1000 V
JESD-609 codee0
Installation featuresTHROUGH HOLE MOUNT
Number of components1
Maximum on-state current0.05 A
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Optoelectronic device typesTRANSISTOR OUTPUT OPTOCOUPLER
Maximum power dissipation0.3 W
Maximum response time0.000015 s
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 10 September 1997
INCH-POUND
MIL-PRF-19500/486E
10 June 1997
SUPERSEDING
MIL-S-19500/486D
27 June 1995
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, COUPLER, OPTOELECTRIC, SOLID STATE;
TYPES 4N22, 4N22A, 4N23, 4N23A, 4N24, 4N24A, 4N22U, 4N22AU,
4N23U, 4N23AU, 4N24U, 4N24AU; JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for solid state optically coupled isolators in which a gallium
arsenide or gallium aluminum arsenide diode light source is optically coupled to a silicon NPN phototransistor. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figures 1 and 2.
1.3 Maximum ratings. Unless otherwise specified, maximum ratings apply to all case outlines and TA = +25°C.
1.3.1 Infrared-emitting diode maximum ratings.
VR
IF 1/
IP 2/
V dc
mA dc
A (pk)
2
40
1
1/ Derate linearly to +125°C at 0.67 mA/°C above +65°C.
2/ 1.0
µs
pulse width, 300 pps.
1.3.2 Phototransistor maximum ratings.
VCEO
VCBO
VEBO
PT 1/
IC
V dc
V dc
V dc
mW
mA dc
35
35
4
300
50
1/ Derate linearly to +125°C at 3 mA/°C above +25°C.
1.3.1 Total device ratings.
TJ and TSTG
°C
-65 to +125
VIO
V dc
1,000 max
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
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