5STF 15F1232
5STF 15F1232
Old part no. TR 918-1530-12
Fast Thyristor
Properties
§
§
§
Amplifying gate
High operational capability
Optimized turn-off parameters
Applications
§
Power switching applications
Key Parameters
V
DRM
, V
RRM
= 1 200
I
TAV
= 1 532
I
TSM
= 21.0
V
TO
= 1.283
r
T
= 0.209
t
q
= 32.0
V
A
kA
V
mΩ
µs
Types
V
RRM
, V
DRM
5STF 15F1232..1240
5STF 15F1032..1040
1 200 V
1 000 V
Conditions:
T
j
= -40 ÷ 125 °C, half sine waveform,
f = 50 Hz, note 1
Mechanical Data
F
m
m
D
S
Mounting force
Weight
Surface
creepage
distance
Air strike
distance
22 ± 2 kN
0.48 kg
25 mm
D
a
13 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - TR/195/05 Jul-10
1 of 6
5STF 15F1232
Maximum Ratings
V
RRM
V
DRM
I
TRMS
I
TAVm
I
TSM
I
2
t
(di
T
/dt)
cr
Repetitive peak reverse
and off-state voltage
T
j
= -40
÷
125 °C, note 1
Maximum Limits
5STF 15F1232..1240
5STF 15F1032..1040
1 200
1 000
2 407
1 532
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
Unit
V
RMS on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
A
A
A
A
2
s
A/µs
Average on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
21 000
22 400
2 205 000
2 080 000
800
Limiting load integral
half sine pulse, V
R
= 0 V
Critical rate of rise of on-state current
I
T
= I
TAVm
, half sine waveform, f = 50 Hz,
V
D
= 2/3 V
DRM
, t
r
= 0.3 µs, I
GT
= 2 A
(dv
D
/dt)
cr
P
GAVm
I
FGM
V
FGM
V
RGM
T
jmin
- T
jmax
T
stgmin
-
T
stgmax
Critical rate of rise of off-state voltage
V
D
= 2/3 V
DRM
1 000
3
10
12
10
-40 ÷ 125
-40 ÷ 125
V/µs
W
A
V
V
°C
°C
Maximum average gate power losses
Peak gate current
Peak gate voltage
Reverse peak gate voltage
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 125 °C
Note 1: De-rating factor of 0.13% V
RRM
or V
DRM
per °C is applicable for T
j
below 25 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/195/05 Jul-10
2 of 6
5STF 15F1232
Characteristics
min.
V
TM
V
T0
r
T
I
DM
I
RM
t
gd
Maximum peak on-state voltage
I
TM
= 2 000 A
Value
typ.
max.
1.680
1.283
0.209
150
150
2.0
Unit
V
V
mΩ
mA
mA
µs
Threshold voltage
Slope resistance
I
T1
= 2 403 A, I
T2
= 7 210 A
Peak off-state current
V
D
= V
DRM
Peak reverse current
V
R
= V
RRM
Delay time
T
j
= 25 °C, V
D
= 0.4 V
DRM
, I
TM
= I
TAVm
,
t
r
= 0.3 µs, I
GT
= 2 A
t
q
Turn-off time
I
T
= 1 000 A, di
T
/dt = -50 A/µs,
V
R
= 100 V, V
D
= 2/3 V
DRM
,
dv
D
/dt = 50 V/µs
group of
t
q
5STF 15F1232
5STF 15F1032
5STF 15F1240
5STF 15F1040
32.0
µs
40.0
450
150
µC
A
mA
mA
4
3
2
500
250
150
V
Q
rr
I
rrM
I
H
I
L
V
GT
Recovery charge
the same conditions as at t
q
Reverse recovery current
the same conditions as at t
q
Holding current
Latching current
Gate trigger voltage
V
D
= 12V, I
T
= 4 A
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
250
150
1 500
1 000
0.25
I
GT
Gate trigger current
V
D
= 12V, I
T
= 4 A
mA
10
Unless otherwise specified T
j
= 125 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/195/05 Jul-10
3 of 6
5STF 15F1232
Thermal Parameters
R
thjc
Thermal resistance junction to case
double side cooling
anode side cooling
cathode side cooling
Value
16.0
25.0
45.0
4.0
8.0
Unit
K/kW
R
thch
Thermal resistance case to heatsink
double side cooling
single side cooling
K/kW
Transient Thermal Impedance
Analytical function for transient
thermal impedance
i
τ
i
( s )
R
i
( K/kW )
Transient therm al im pedance junction
to case
Z
thjc
( K/kW )
18
16
14
12
10
8
6
4
2
0
0,001
1
0.4653
5.50
2
0.1533
7.24
3
0.0375
2.00
4
0.0034
1.34
Z
thjc
=
∑
R
i
(1
−
exp(
−
t
/
τ
i
))
i
=
1
4
Conditions:
F
m
= 22 ± 2 kN, Double side cooled
Correction for periodic waveforms
180° sine:
add 1.3 K/kW
180° rectangular: add 1.8 K/kW
120° rectangular: add 3.0 K/kW
60° rectangular: add 5.1 K/kW
0,01
0,1
1
10
Square w ave pulse duration
t
d
( s )
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/195/05 Jul-10
4 of 6
5STF 15F1232
I
TSM
( kA )
I
T
( A )
2
∫
i dt
9000
8000
7000
6000
5000
T
j
= 125 °C
4000
3000
2000
25 °C
30
2,8
26
2,4
22
2
18
1,6
14
I
TSM
1,2
10
0,8
1000
0
0
1
2
3
4
5
V
T
(V)
6
1
10
t ( ms )
0,4
100
Fig. 3 Maximum on-state characteristics
Fig. 4 Surge on-state current vs. pulse length,
half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax
P
T
( W )
3000
180°
P
T
( W )
3500
ψ
= 30° 60° 90° 120°
3500
ψ
= 30°
60°
90° 120°
180°
270°
DC
3000
2500
DC
2500
2000
2000
1500
1500
1000
1000
500
500
0
0
400
800
1200
1600
0
0
400
800
1200
1600
I
TAV
( A )
I
TAV
( A )
Fig. 5 On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 6 On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/195/05 Jul-10
5 of 6
i
2
dt
(10
6
A
2
s)
10000
34
3,2
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