FT6112 datasheet, PDF - EEWORLD Datasheet

FT6112: Description4.5A, 120V, 0.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-65, 12 PIN; CategoryDiscrete semiconductor The transistor; File Size94KB，4 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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FT6112 Overview

4.5A, 120V, 0.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-65, 12 PIN

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	FLANGE MOUNT, R-PSFM-T12
Contacts	12
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	ISOLATED
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	120 V
Maximum drain current (ID)	4.5 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	90 pF
JESD-30 code	R-PSFM-T12
Number of components	4
Number of terminals	12
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	40 W
Maximum pulsed drain current (IDM)	9 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	FT6112	FT6112D
Description	4.5A, 120V, 0.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-65, 12 PIN	4.5A, 120V, 0.5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, RM-65, 12 PIN
Maker	FUJITSU	FUJITSU
package instruction	FLANGE MOUNT, R-PSFM-T12	FLANGE MOUNT, R-PSFM-T12
Contacts	12	12
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Shell connection	ISOLATED	ISOLATED
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	120 V	120 V
Maximum drain current (ID)	4.5 A	4.5 A
Maximum drain-source on-resistance	0.5 Ω	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	90 pF	90 pF
JESD-30 code	R-PSFM-T12	R-PSFM-T12
Number of components	4	4
Number of terminals	12	12
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	40 W	40 W
Maximum pulsed drain current (IDM)	9 A	9 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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