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3PMT30E3

Description
Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size80KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

3PMT30E3 Overview

Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

3PMT30E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionR-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage33.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
3PMT5.0 thru 3PMT170
POWERMITE
1500 Watt Transient Absorption Zener
®
SCOTTSDALE DIVISION
DESCRIPTION
These 1500 watt transient voltage suppressors offer power-handling capabilities only
found in larger packages. They are most often used for protecting against transients
from inductive switching environments or induced secondary lightning effects as
found in lower surge levels of IEC61000-4-5. With very fast response times, they are
also effective in protection from ESD or EFT. Powermite
®
package features include a
full metallic bottom that eliminates the possibility of solder-flux entrapm ent during
assembly. They also provide unique locking tab acting as an integral heat sink. With
its very short terminations, parasitic inductance is minimized to reduce voltage
overshoots during fast-rise-time transients
.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
POWERMITE
®
WWW.
Microsemi
.
COM
FEATURES
Very low profile surface mount package (1.1mm)
Integral heat sink-locking tabs
Compatible with automatic insertion equipment
Full metallic bottom eliminates flux entrapment
Voltage range 5 volts to 170 volts
Available in both unidirectional or bi-directional
(C suffix for bi-directional)
APPLICATIONS / BENEF ITS
Secondary lightning transient protection
Inductive switching transient protection
Small footprint
Very low parasitic inductance for minimal
voltage overshoot
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively and
IEC61000-4-5 for surge levels defined herein
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
1500 Watt peak pulse power (10 / 1000 µsec.)
Forward Surge Current: 200 Amps (8.3 ms)
(excluding bidirectional)
Repetition surge rate (duty factor): 0.01%
Lead and mounting temperature: 260°C for 10 sec
MECHANICAL AND PACKAGING
Terminals tin-lead plated
Two-lead side internally connected together
Cathode designated with band (unidirectional)
Molded epoxy package meets UL94V-0
Weight: 0.072 grams (approximate)
Thermal resistance: 2.5°C / watt junction to tab
130°C / watt junction to ambient with
recommended footprint
Tape & Reel packaging per EIA-481-2
(16 mm - 6000 units/reel)
P E A K P U L S E P O W E R R A TI N G S
P
pp
– Peak Pulse Power – kW
Peak Pulse Power (P
pp
) or Current (I
pp
)
in percent of 25º C rating
100
100
75
50
25
0
0
50 100 150 200
10
3PMT
1.0
.10
100ns
1µs
10µs
100µs
1ms
10ms
t
d
– Pulse Time – sec
Copyright
©
2001
MSCXXXX.PDF 09-09 2002 REV 0
T – Temperature – ºC
Page 1
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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