BCW32R datasheet, PDF - EEWORLD Datasheet

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BCW32R: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size27KB，1 Pages; ManufacturerDiodes Incorporated

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BCW32R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCW32R Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

SMALL SIGNAL TRANSISTORS

ISSUE 2 - JUNE 1995

PARTMARKING DETAILS

BCW31 D1

BCW32 D2

BCW33 D3

BCW31R D4

BCW32R D5

BCW33R D6

BCW31

BCW32

BCW33

E

C

B

COMPLEMENTARY TYPES

BCW31 - BCW29

BCW32 - BCW30

BCW33 - N/A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

32

5

200

100

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Base - Emitter Voltage

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Collector- Base Cut-Off Current

BCW31

Static Forward

Current Transfer

Ratio

BCW32

BCW33

Transition Frequency

Collector Capacitance

Noise Figure

SYMBOL

V

BE

V

CE(SAT)

V

BE(SAT)

I

CBO

h

FE

h

FE

h

FE

f

T

C

TC

N

110

200

420

90

150

270

300

4

10

MIN.

550

120

210

750

850

100

10

220

450

800

MHz

pF

dB

TYP.

MAX.

700

250

UNIT

mV

µ

A

CONDITIONS.

I

C

=2mA, V

CE

= 5V

I

C

=10mA, I

B

= 0.5mA

I

C

=50mA, I

B

=2.5mA

I

C

=10mA, I

B

=0.5mA

I

C

=50mA, I

B

=2.5mA

I

E

=0, V

CB

=20V

I

E

=0,V

CB

=20V,T

j=100°C

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=10mA, V

CE

=5V

f = 35MHz

I

E

=I

e

=0, V

CB

=10V

f= 1MHz

I

C

= 200mA, V

CE

=5V

R

S

=2K

Ω

, f=1KHz

B= 200Hz

nA

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for this device

PAGE NO

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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