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IP4337CX18/LF
7-channel integrated filter network with ESD input protection
to IEC 61000-4-2 level 4
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
The IP4337CX18/LF is a 7-channel RC low-pass filter array which is designed to provide
filtering of undesired RF signals in the 800 MHz to 3000 MHz frequency band. In addition,
the IP4337CX18/LF incorporates diodes to provide protection to downstream components
from ElectroStatic Discharge (ESD) voltages as high as
±15
kV.
The IP4337CX18/LF is fabricated using monolithic silicon technology and integrates
7 resistors and 14 diodes in a single Wafer-Level Chip-Scale Package (WLCSP)
measuring 1.96 mm by 1.61 mm (typical). These features make the IP4337CX18/LF ideal
for use in applications requiring the utmost in miniaturization.
1.2 Features
I
I
I
I
Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
Integrated 7-channel
π-type
RC filter network
70
Ω
series resistance; 25 pF (typical) capacitance per line
Integrated ESD protection withstanding
±15
kV contact discharge, far exceeding
IEC 61000-4-2 level 4
I
WLCSP with 0.4 mm pitch
1.3 Applications
I
Cellular and Personal Communication System (PCS) mobile handsets
I
Cordless telephones
I
Wireless data (WAN/LAN) systems
NXP Semiconductors
IP4337CX18/LF
7-channel integrated filter network with ESD input protection
2. Pinning information
2.1 Pinning
bump A1
index area
IP4337CX18/LF
1
2
3
4
5
A
B
C
D
008aaa185
Transparent top view
Fig 1.
Pin configuration IP4337CX18/LF
2.2 Pin description
Table 1.
Pin
A2 and A5
A1 and A4
B1 and B5
C2 and C5
C1 and C4
D2 and D5
D1 and D4
A3, B3, C3, D3
B2 and B4
Pinning
Description
filter channel 1
filter channel 2
filter channel 3
filter channel 4
filter channel 5
filter channel 6
filter channel 7
ground
no balls
3. Ordering information
Table 2.
Ordering information
Package
Name
IP4337CX18/LF
WLCSP18
Description
wafer level chip-size package; 18 bumps; 1.96
×
1.61
×
0.61 mm
Version
IP4337CX18/LF
Type number
IP4337CX18LF_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
2 of 12
NXP Semiconductors
IP4337CX18/LF
7-channel integrated filter network with ESD input protection
4. Functional diagram
Rs(ch)
A1, A2, B1, C1,
C2, D1, D2
A4, A5, B5, C4,
C5, D4, D5
A3, B3, C3, D3
008aaa186
Fig 2.
Schematic diagram IP4337CX18/LF
5. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
I
V
ESD
Parameter
input voltage
electrostatic discharge voltage all pins to ground
contact discharge
air discharge
IEC 61000-4-2 level 4;
all pins to ground
contact discharge
air discharge
I
ch
P
ch
P
tot
T
stg
T
amb
[1]
[1]
[1]
Conditions
Min
−0.5
−15
−15
Max
+5.5
+15
+15
Unit
V
kV
kV
−8
−15
-
-
-
−55
+8
+15
33
60
250
+150
260
+85
kV
kV
mA
mW
mW
°C
°C
°C
channel current (DC)
channel power dissipation
total power dissipation
storage temperature
T
amb
= 70
°C
continuous power;
T
amb
= 70
°C
continuous power;
T
amb
= 70
°C
10 s maximum
T
reflow(peak)
peak reflow temperature
ambient temperature
-
−30
Device is qualified with 1000 pulses of
±15
kV contact discharges each, according to the IEC 61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
IP4337CX18LF_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
3 of 12
NXP Semiconductors
IP4337CX18/LF
7-channel integrated filter network with ESD input protection
6. Characteristics
Table 4.
Channel characteristics
T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter
R
s(ch)
C
ch
V
BR
I
LR
[1]
Conditions
V
bias(DC)
= 0 V; f = 1 MHz
I
test
= 1 mA
per channel; V
I
= 3.0 V
[1]
Min
52.5
-
6
-
Typ
70
25
-
-
Max
87.5
30
20
20
Unit
Ω
pF
V
nA
channel series resistance f = 0 Hz (DC)
channel capacitance
breakdown voltage
reverse leakage current
Guaranteed by design.
Table 5.
Frequency characteristics
T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter
α
il
α
ct
insertion loss
crosstalk attenuation
Conditions
800 MHz < f < 3 GHz;
R
gen
= 50
Ω;
R
L
= 50
Ω
800 MHz < f < 3 GHz;
R
gen
= 50
Ω;
R
L
= 50
Ω
Min
-
-
Typ
20
25
Max
-
-
Unit
dB
dB
IP4337CX18LF_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
4 of 12
51mcu
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