TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1
2
VDD = 18V, VIN = VDD or GND
Input Leakage Current
IIL
VC = VDD or GND
3
1
2
3
Input Leakage Current
IIH
VC = VDD or GND
1
2
3
Input/Output Leakage
Current (Switch OFF)
IOZL
VC = 0V, VIS = 18V,
VOS = 0V, VIS = 0V,
VOS = 18V
VDD = 20
1
2
VDD = 18V
IOZH
VDD = 20
3
1
2
VDD = 18V
On Resistance
RON5
RON10
RON15
On Resistance
RON5
VC = VDD, RL = 10kW VDD = 5V
returned to VDD -
VDD = 10V
VSS/2
VDD = 15V
VIS = VSS to VDD
VDD = 5V
3
1
1
1
1, 2
LIMITS
TEMPERATURE
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+125
o
C
-55
o
C
On Resistance
RON10
VDD = 10V
1, 2
+125
o
C
-55
o
C
On Resistance
RON15
VDD = 15V
1, 2
+125
o
C
-55
o
C
Functional
(Note 3)
F
VDD = 2.8V, VIN = VDD or GND
VDD = 20V, VIN = VDD or GND
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Switch Threshold
RL = 100k to VDD
N Threshold Voltage
P Threshold Voltage
SWTHRH5 VDD = 5V, VC = 1.5V, VIS = GND
SWTHRH15 VDD = 15V, VC = 2V, VIS = GND
VNTH
VPTH
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
7
7
8A
8B
1, 2, 3
1, 2, 3
1
1
+25
o
C
+25
o
C
+125
o
C
-55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
+25
o
C
+25
o
C
4.1
14.1
-2.8
0.7
-
-
-0.7
2.8
V
V
V
V
MIN
-
-
-
-100
-1000
-100
-
-
-
-100
-1000
-100
-
-
-
1050
400
240
-
-
-
-
-
-
MAX
0.5
50
0.5
-
-
-
100
1000
100
-
-
-
100
1000
100
-
-
-
1300
800
550
310
320
220
UNITS
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
nA
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
V
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
(NOTE 1)
VDD = 20V, VIN = VDD or GND
VOH > VOL <
VDD/2 VDD/2
7-967
Specifications CD4066BMS
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1, 2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C, +125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
MAX
1
2
UNITS
V
V
PARAMETER
Control Input Low
Voltage (Note 2)
|IIS| < 10µa, VIS = VSS,
VOS = VDD and
VIS = VDD, VOS = VSS
Control Input High
Voltage
(Note 2, Figure 2)
VIS = VSS and VIS =
VDD
SYMBOL
VILC5
VILC15
CONDITIONS
(NOTE 1)
VDD = 5V
VDD = 15V
VIHC
VDD = 5V, |IIS| = .51mA, 4.6V <
VOS < 0.4V
VDD = 5V, |IIS| = .36mA, 4.6V <
VOS < 0.4V
VDD = 5V, |IIS| = .64mA, 4.6V <
VOS < 0.4V
1
2
3
1
2
3
+25
o
C
+125
o
C
-55
o
C
+25
o
C
+125
o
C
-55
o
C
3.5
3.5
3.5
11
11
11
-
-
-
-
-
-
V
V
V
V
V
V
VIHC
VDD = 15V, |IIS| = 3.4mA, 13.5V <
VOS <1.5V
VDD = 15V, |IIS| = 2.4mA, 13.5V <
VOS < 1.5V
VDD = 15V, |IIS| = 4.2mA, 13.5V <
VOS <1.5V
NOTES: 1. All voltages referenced to device GND, 100% testing being
implemented.
2. Go/No Go test with limits applied to inputs.
3. VDD = 2.8V/3.0V, RL = 100K to VDD
VDD = 20V/18V, RL = 10K to VDD
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS TEMPERATURE
9
10, 11
9
10, 11
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
LIMITS
MIN
-
-
-
-
MAX
40
54
70
95
UNITS
ns
ns
ns
ns
PARAMETER
Propagation Delay
Signal Input to Signal
Output
Propagation Delay
Turn-On, Turn-Off
NOTES:
SYMBOL
TPLH
TPHL
CONDITIONS
VC = VDD = 5V, VSS = GND
(Notes 2, 3)
TPHZ/ZH VIS = VDD = 5V (Notes 1, 2)
TPLZ/ZL
1. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
2. -55
o
C and +125
o
C limits guaranteed, 100% testing being implemented.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
SYMBOL
IDD
CONDITIONS
VDD = 5V, VIN = VDD or GND
NOTES
1, 2
TEMPERATURE
-55
o
C, +25
o
C
+125
o
C
VDD = 10V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
VDD = 15V, VIN = VDD or GND
1, 2
-55
o
C, +25
o
C
+125
o
C
Control Input Low
Voltage
|IIS| < 10µa, VIS = VSS,
VOS = VDD and
VIS = VDD, VOS = VSS
VILC10
VDD = 10V
1, 2
+25
o
C, +125
o
C,
-55
o
C
MIN
-
-
-
-
-
-
-
MAX
0.25
7.5
0.5
15
0.5
30
2
UNITS
µA
µA
µA
µA
µA
µA
V
7-968
Specifications CD4066BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(Continued)
LIMITS
PARAMETER
Control Input High
Voltage (See Figure 2)
Propagation Delay
Signal Input to
Signal Output
Propagation Delay
Turn-On, Turn-Off
Input Capacitance
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
SYMBOL
IDD
VNTH
∆VTN
VTP
∆VTP
F
CONDITIONS
VDD = 20V, VIN = VDD or GND
VDD = 10V, ISS = -10µA
VDD = 10V, ISS = -10µA
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
Propagation Delay Time
TPHL
TPLH
VDD = 5V
1, 2, 3, 4
+25
o
C
NOTES
1, 4
1, 4
1, 4
1, 4
1, 4
1
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
-2.8
-
0.2
-
VOH >
VDD/2
-
MAX
25
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25
o
C
Limit
UNITS
µA
V
V
V
V
V
SYMBOL
VIHC10
TPLH
TPHL
CONDITIONS
VDD = 10V, VIS = VDD or GND
VDD = 10V
VDD = 15V
NOTES
2
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2
TEMPERATURE
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
7
-
-
-
-
-
MAX
-
20
15
40
30
7.5
UNITS
V
ns
ns
ns
ns
pF
TPHZ/ZH VDD = 10V
TPLZ/ZL
VDD = 15V
CIN
Any Input
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
3. See Table 2 for +25
o
C limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25
O
C
PARAMETER
Supply Current - SSI
ON Resistance
SYMBOL
IDD
RONDEL10
±0.1µA
±
20% x Pre-Test Reading
DELTA LIMIT
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
Interim Test 1 (Post Burn-In)
Interim Test 2 (Post Burn-In)
PDA (Note 1)
Interim Test 3 (Post Burn-In)
PDA (Note 1)
MIL-STD-883
METHOD
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
100% 5004
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
IDD, IOL5, IOH5A, RONDEL10
READ AND RECORD
IDD, IOL5, IOH5A, RONDEL10
IDD, IOL5, IOH5A, RONDEL10
IDD, IOL5, IOH5A, RONDEL10
7-969
Specifications CD4066BMS
TABLE 6. APPLICABLE SUBGROUPS
(Continued)
CONFORMANCE GROUP
Final Test
Group A
Group B
Subgroup B-5
Subgroup B-6
Group D
MIL-STD-883
METHOD
100% 5004
Sample 5005
Sample 5005
Sample 5005
Sample 5005
GROUP A SUBGROUPS
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 2, 3, 8A, 8B, 9
Subgroups 1, 2 3
Subgroups 1, 2, 3, 9, 10, 11
READ AND RECORD
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
MIL-STD-883
METHOD
5005
TEST
PRE-IRRAD
1, 7, 9
POST-IRRAD
Table 4
READ AND RECORD
PRE-IRRAD
1, 9
POST-IRRAD
Table 4
CONFORMANCE GROUPS
Group E Subgroup 2
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
OSCILLATOR
FUNCTION
Static Burn-In 1 (Note 1)
Static Burn-In 2 (Note 1)
Dynamic Burn-In (Note 1)
Irradiation (Note 2)
NOTE:
1. Each pin except VDD and GND will have a series resistor of 10K
±
5%, VDD = 18V
±
0.5V
2. Each pin except VDD and GND will have a series resistor of 47K
±
5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD
= 10V
±
0.5V
OPEN
2, 3, 9, 10
2, 3, 9, 10
-
2, 3, 9, 10
GROUND
1, 4-8, 11-13
7
7
7
VDD
14
1, 4-6, 8, 11-14
14
1, 4-6, 8, 11-14
2, 3, 9, 10
5, 6, 12, 13
1, 4, 8, 11
9V
±
-0.5V
50kHz
25kHz
Functional Diagram
TRUTH TABLE EACH SWITCH
IN/OUT
SIG A
OUT/IN
2
1
SW
A
13
CONTROL A
14
VDD
INPUT
VC
1
1
VIS
0
1
0
1
OUTPUT
VOS
0
1
Open
Open
OUT/IN
SIG B
IN/OUT
3
SW
D
12
CONTROL D
0
0
4
SW
B
11
IN/OUT
SIG D
CONTROL B
5
10
OUT/IN
Positive Logic: Switch ON VC = “1”
Switch OFF VC = “0”
CONTROL C
6
SW
C
9
OUT/IN
SIG C
VSS
7
8
IN/OUT
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
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Embedded System
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