TXB-GC1612-35 datasheet, PDF - EEWORLD Datasheet

TXB-GC1612-35: DescriptionVariable Capacitance Diode, X Band, 8.2pF C(T), 45V, Silicon, Abrupt; CategoryDiscrete semiconductor diode; File Size95KB，3 Pages; ManufacturerLockheed Martin

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TXB-GC1612-35 Overview

Variable Capacitance Diode, X Band, 8.2pF C(T), 45V, Silicon, Abrupt

Parameter Name	Attribute value
Objectid	1427722623
package instruction	O-MEMW-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Minimum breakdown voltage	45 V
Shell connection	CATHODE
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Minimum diode capacitance ratio	5.6
Nominal diode capacitance	8.2 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	X BAND
JESD-30 code	O-MEMW-N2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	ROUND
Package form	MICROWAVE
Certification status	Not Qualified
minimum quality factor	1500
Maximum reverse current	0.02 µA
Reverse test voltage	35 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Varactor Diode Classification	ABRUPT

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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