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TXB-GC1612-89

Description
Variable Capacitance Diode, X Band, 8.2pF C(T), 45V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size95KB,3 Pages
ManufacturerLockheed Martin
Download Datasheet Parametric View All

TXB-GC1612-89 Overview

Variable Capacitance Diode, X Band, 8.2pF C(T), 45V, Silicon, Abrupt

TXB-GC1612-89 Parametric

Parameter NameAttribute value
Objectid1427722444
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage45 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio5.6
Nominal diode capacitance8.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandX BAND
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor1500
Maximum reverse current0.02 µA
Reverse test voltage35 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
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