BC337-40BK datasheet, PDF - EEWORLD Datasheet

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BC337-40BK: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size90KB，2 Pages; ManufacturerDIOTEC; Websitehttp://www.diotec.com/; Environmental Compliance

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BC337-40BK Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC337-40BK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	DIOTEC
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	170
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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BC337-xBK / BC338-xBK

NPN

Version 2010-05-27

General Purpose Si-Epitaxial Planar Transistors

Si-Epitaxial Planar-Transistoren für universellen Einsatz

Power dissipation

Verlustleistung

Plastic case

Kunststoffgehäuse

NPN

625 mW

TO-92

(10D3)

0.18 g

4.6

±0.1

min 12.5

Weight approx. – Gewicht ca.

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Special packaging bulk

Sonder-Lieferform Schüttgut

CBE

2 x 1.27

Dimensions - Maße [mm]

Maximum ratings (T

= 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Base current – Basisstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

E-B short

B open

C open

CES

CEO

EBO

tot

Grenzwerte (T

= 25°C)

BC337

50 V

45 V

625 mW

)

800 mA

100 mA

-55...+150°C

-55…+150°C

BC338

30 V

25 V

Characteristics (T

= 25°C)

Min.

DC current gain – Kollektor-Basis-Stromverhältnis

)

= 1 V, I

= 100 mA

Group -16

Group -25

Group -40

Group -16

Group -25

Group -40

CEsat

100

160

250

100

170

–

Kennwerte (T

= 25°C)

Typ.

160

250

400

130

200

320

–

Max.

250

400

630

–

0.7 V

= 1 V, I

= 300 mA

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.

)

= 500 mA, I

= 50 mA

Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

Tested with pulses t

= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t

= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

BC337-40BK Related Products

	BC337-40BK	BC337-25BK	BC337-16BK	BC338-25BK	BC338-16BK	BC338-40BK
Description	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Contacts	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Collector-emitter maximum voltage	45 V	45 V	45 V	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	170	100	60	100	60	170
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Maker	DIOTEC	-	-	DIOTEC	DIOTEC	DIOTEC
Base Number Matches	1	1	1	1	-	-

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