P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
400W, 6.8V - 200V Surface Mount Transient Voltage Suppressor
FEATURES
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●
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●
●
●
●
Low profile package
Ideal for automated placement
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
Typical I
R
less than 1μA above 10V
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
P
PPM
t
p
= 10/1000 μs waveform
T
J MAX
Package
Configuration
VALUE
5.5 - 171
6.12 - 210
400
150
UNIT
V
V
W
°C
DO-214AC (SMA)
Single
APPLICATIONS
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●
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●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.06g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25 A for
unidirectional only
Operating junction temperature range
SYMBOL
P
PK
I
FSM
V
F
T
J
VALUE
400
40
3.5
-55 to +150
-55 to +150
UNIT
W
A
V
°C
°C
Storage temperature range
T
STG
Note:
1. Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P4SMA6.8 - types P4SMA200A
2. Electrical characteristics apply in both directions
1
Version: Q1705
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Breakdown
Part number
Marking
code
voltage
V
BR
@I
T
(V)
Uni
Uni
Min.
Max.
(1)
Working
Test
stand-off
current
voltage
I
T
(mA)
V
WM
(V)
leakage current
I
R
@V
WM
(1)
Maximum
Maximum reverse
Maximum peak
clamping
impulse current
voltage
I
PPM
(A)
(Note 5)
V
C
@I
PPM
(V)
(Note 5)
Maximum
Temperatur
e
Coefficient
of VBR
(%/°C)
(µA)
P4SMA68
CNJ
61.2 74.8
1.0
55.1
1
P4SMA68A
CPJ
64.6 71.4
1.0
58.1
1
P4SMA75
CQJ
67.5 82.5
1.0
60.7
1
P4SMA75A
CRJ
71.3 78.8
1.0
64.1
1
P4SMA82
CSJ
73.8 90.2
1.0
66.4
1
P4SMA82A
CTJ
77.9 86.1
1.0
70.1
1
P4SMA91
CUJ
81.9 100
1.0
73.7
1
P4SMA91A
CVJ
86.5 95.5
1.0
77.8
1
P4SMA100
CWJ
90
110
1.0
81.0
1
P4SMA100A
CXJ
95
105
1.0
85.5
1
P4SMA110
CYJ
99
121
1.0
89.2
1
P4SMA110A
CZJ
105
116
1.0
94.0
1
P4SMA120
RDJ
108
132
1.0
97.2
1
P4SMA120A
REJ
114
126
1.0
102
1
P4SMA130
RFJ
117
143
1.0
105
1
P4SMA130A
RGJ
124
137
1.0
111
1
P4SMA150
RHJ
135
165
1.0
121
1
P4SMA150A
RKJ
143
158
1.0
128
1
P4SMA160
RLJ
144
176
1.0
130
1
P4SMA160A
RMJ
152
168
1.0
136
1
P4SMA170
RNJ
153
187
1.0
138
1
P4SMA170A
RPJ
162
179
1.0
145
1
P4SMA180
RQJ
162
198
1.0
146
1
P4SMA180A
RRJ
171
189
1.0
154
1
P4SMA200
RSJ
180
220
1.0
162
1
P4SMA200A
RTJ
190
210
1.0
171
1
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
4.2
4.5
3.8
4.0
3.5
3.7
3.2
3.3
2.9
3.0
2.6
2.7
2.4
2.5
2.2
2.3
1.9
2.0
1.8
1.9
1.7
1.8
1.6
1.7
1.4
1.51
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
3
Version: Q1705
P4SMA6.8(A) – P4SMA200(A)
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
) A
DERATING IN PERCENTAGE (%)
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
Fig.2 Pulse Derating Curve
P
PPM
, PEAK PULSE POWER, KW
100
75
50
1
25
0.1
0.1
1
10
100
1000
tp, PULSE WIDTH, (μs)
10000
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE
(
°
C)
Fig.3 Claming Power Pulse Waveform
Fig.4 Maximum Non-repetitive Forward Surge
Current
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
8.3ms Single Half Sine Wave
40
140
120
PEAK PULSE CURRENT (%)
100
Peak value
I
PPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Rise time tr=10μs to 100%
80
60
40
20
0
0
0.5
1
1.5
t, TIME (ms)
2
2.5
3
10/1000μs, waveform
td
Half value-I
PPM
/2
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
5
Version: Q1705
Microcontroller MCU
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