MP02X175 Series
MP02X175 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces January 2000 version, DS4478-3.0
DS4478-5.0 August 2001
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (non-toxic) Isolation Medium
KEY PARAMETERS
V
DRM
I
TSM
I
T(AV)(per arm)
V
isol
1600V
6800A
175A
3000V
Code
Circuit
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
HBN
Fig.1 Circuit diagrams
HBT
HBP
VOLTAGE RATINGS
Type
Number
Repetitive
Peak
Voltages
V
DRM
V
RRM
1600
1400
1200
1000
Conditions
MP02X175-16
MP02X175-14
MP02X175-12
MP02X175-10
T
vj
= 125
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
1
2
3
Lower voltage grades available.
ORDERING INFORMATION
Order As:
MP02HBT175-16
or
MP02HBT175-14
or
MP02HBT175-12
or
MP02HBT175-10
MP02HBP175-16
or
MP02HBP175-14
or
MP02HBP175-12
or
MP02HBP175-10
MP02HBN175-16
or
MP02HBN175-14
or
MP02HBN175-12
or
MP02HBN175-10
Note: When ordering, please use the complete part number.
Module type code: MP02.
For further information see Package Details.
Fig. 2 Electrical connections - (not to scale)
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MP02X175 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
I
T(AV)
Parameter
Mean on-state current
Test Conditions
Half wave resistive load
T
case
= 75˚C
T
case
= 85˚C
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
T
case
= 75˚C
10ms half sine, T
j
= 125˚C
V
R
= 0
10ms half sine, T
j
= 125˚C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Max.
175
150
275
6.8
231 x 10
3
5.5
150 x 10
3
3000
Units
A
A
A
kA
A
2
s
kA
A
2
s
V
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
dc
Half wave
3 Phase
R
th(c-hs)
Thermal resistance - case to heatsink
(per thyristor or diode)
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M6
-
Weight (nominal)
-
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
-
–40
-
-
-
125
125
˚C
˚C
Test Conditions
Min.
-
-
-
-
Max.
0.19
0.20
0.21
0.07
Units
˚C/kW
˚C/kW
˚C/kW
˚C/kW
6 (55) Nm (lb.ins)
5 (44) Nm (lb.ins)
350
g
2/8
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MP02X175 Series
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
to 500A,
gate source 10V, 5Ω,
t
r
= 0.5µs, T
j
= 125˚C
V
T(TO)
r
T
Threshold voltage
On-state slope resistance
At T
vj
= 125˚C. See note 1
At T
vj
= 125˚C. See note 1
-
-
1.05
0.8
V
mΩ
Repetitive 50Hz
Min.
-
-
-
Max.
30
1000
500
Units
mA
V/µs
A/µs
Note 1:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max.
3.0
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
3/8
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MP02X175 Series
15
2000
Measured under pulse conditions
T
j
= 125˚C
Peak half sine wave on-state current - (kA)
180
Instantaneous on-state current, I
T
- (A)
1500
10
I
2
t value - (A
2
s x 10
3)
140
1000
5
I
2
t
100
500
0
0.5
0
1
10
ms
1
2 3 45
10
60
20 30 50
1.5
1.0
2.0
Instantaneous on-state voltage, V
T
- (V)
2.5
cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
100
Fig. 4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% V
RRM
at T
case
= 125˚C)
0.3
R
th(j-hs)
Table gives pulse power P
GM
in watts
Pulse Pulse Frequency Hz
Width
100
400
50
µs
V
FGM
Gate trigger voltage, V
GT
- (V)
Thermal Impedance - (˚C/W)
10
20
25
100
500
1ms
10ms
100
100
100
100
100
10
100
100
100
100
50
-
100
100
100
25
-
-
75W
50W
10W
5W
100W
0.2
R
th(j-c)
T
j
= 25˚C
1.0
r
pe
lim
it
99
%
T
j
= –40˚C
T
j
= 125˚C
0.1
U
V
GD
p
Lo
w
er
lim
it
1%
0.1
0.001
0.01
0.1
1.0
10
I
FGM
0
0.001
0.01
Gate trigger current, I
GT
- (A)
0.1
1.0
Time - (s)
10
100
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
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MP02X175 Series
350
350
d.c.
300
300
180˚
On-state power loss per arm - (W)
On-state power loss per arm - (W)
250
120˚
200
90˚
150
30˚
100
60˚
250
90˚
200
60˚
150
30˚
180˚
120˚
100
50
50
0
0
50
200
250
100
150
Mean on-state current, I
T(AV)
- (A)
300
0
0
50
100
150
200
250
Mean on-state current, I
T(AV)
- (A)
300
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
140
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
140
Maximum permissible case temperature - (˚C)
100
80
Maximum permissible case temperature - (˚C)
120
120
100
80
d.c.
60
60
40
40
20
30˚
0
0
20
40
60˚
90˚ 120˚
180˚
20
30˚
60˚
90˚ 120˚
180˚
60 80 100 120 140 160 180 200 220 240
Mean on-state current, I
T(AV)
- (A)
0
20 40 60 80 100 120 140 160 180 200 220 240 260 280
Mean on-state current, I
T(AV)
- (A)
Fig. 9 Maximum permissible case temperature vs on-state
current at specified conduction angles, sine wave 50/60Hz
Fig. 10 Maximum permissible case temperature vs on-state
current at specified conduction angles, square wave 50/60Hz
5/8
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