BCW60
BCW60
E
MAX.
V
V
I
EBO
=1
µ
A
V
CES
=32V
V
CES
=32V ,T
amb
=150
o
C
V
EBO
=4V
COMPLEMENTARY TYPE
BCW61
20
20
µ
A
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
UNIT
I
C
=2mA
C
B
CONDITIONS.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BCW60AR
BCW60BR
BCW60CR
BCW60DR
CR
DR
AR
BR
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
32
Emitter-Base Breakdown
Voltage
nA
V
(BR)EBO
5
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA
BCW60B AB
BCW60C AC
BCW60D AD
Collector-Emitter
Cut-off Current
20
nA
I
CES
Emitter-Base Cut-Off Current
I
EBO
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
I
C
I
B
P
TOT
tj:tstg
V
CEO
V
EBO
V
CBO
SYMBOL
VALUE
32
32
5
200
50
330
-55 to +150
SOT23
UNIT
V
V
V
mA
mA
mW
°C
Collector-Emitter Saturation
Voltage
0.35
0.55
0.85
1.05
0.75
V
V
V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
h
FE
Group A
Min.
h
11e
h
12e
h
21e
h
22e
1.6
Typ.
2.7
1.5
200
18
30
Max.
4.5
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
MHz
pF
4.5
6
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
Ω,
f=1KH
∆
f=200Hz
1
µ
sec
+10V
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
Ω
50
Ω
R
1
V
CE(sat)
V
V
V
V
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
= 0.25mA
I
C
= 50mA, I
B
=1.25mA
0.12
0.20
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
Base - Emitter Voltage
V
BE
0.55
0.52
0.65
0.78
220
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
310
Min.
2.5
h
FE
120
50
78
170
20
180
70
460
145
250
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group B
Typ.
3.6
2
260
24
50
Max.
6.0
h
FE
Group C
Min.
3.2
Typ.
4.5
2
330
30
60
Max.
8.5
h
FE
Group D
Min.
4.5
Typ.
7.5
3
520
50
100
µ
S
BCW60C
BCW60D
630
I
C
=10mA, V
CE
=5V
f = 100MHz
V
EBO
=0.5V, f =1MHz
V
CBO
=10V, f =1MHz
40
250
90
220
350
Max.
12
k
Ω
10
-4
100
380
100
300
500
Transition Frequency
f
T
125
250
Emitter-Base Capacitance
pF
C
ebo
8
Collector-Base Capacitance
C
cbo
SWITCHING CIRCUIT
-V
BB
V
CC
(+10V)
Noise Figure
N
2
R
2
R
L
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
150
800
ns
ns
ns
ns
ns
ns
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
Ω,
R
2
=5K
Ω
V
BB
=3.6V, R
L
=990
Ω
t
r
< 5nsec
Z
in
≥
100k
Ω
Oscilloscope
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
Spice parameter data is available upon request for this device
PAGE NO
BCW60
BCW60
E
MAX.
V
V
I
EBO
=1
µ
A
V
CES
=32V
V
CES
=32V ,T
amb
=150
o
C
V
EBO
=4V
COMPLEMENTARY TYPE
BCW61
20
20
µ
A
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
UNIT
I
C
=2mA
C
B
CONDITIONS.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
BCW60AR
BCW60BR
BCW60CR
BCW60DR
CR
DR
AR
BR
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
32
Emitter-Base Breakdown
Voltage
nA
V
(BR)EBO
5
ISSUE 2 AUGUST 1995
PARTMARKING DETAILS
BCW60A AA
BCW60B AB
BCW60C AC
BCW60D AD
Collector-Emitter
Cut-off Current
20
nA
I
CES
Emitter-Base Cut-Off Current
I
EBO
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
I
C
I
B
P
TOT
tj:tstg
V
CEO
V
EBO
V
CBO
SYMBOL
VALUE
32
32
5
200
50
330
-55 to +150
SOT23
UNIT
V
V
V
mA
mA
mW
°C
Collector-Emitter Saturation
Voltage
0.35
0.55
0.85
1.05
0.75
V
V
V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
h
FE
Group A
Min.
h
11e
h
12e
h
21e
h
22e
1.6
Typ.
2.7
1.5
200
18
30
Max.
4.5
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
I
C
=10
µ
A, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=50mA, V
CE
=1V
MHz
pF
4.5
6
dB
I
C
= 0.2mA, V
CE
= 5V
R
G
=2K
Ω,
f=1KH
∆
f=200Hz
1
µ
sec
+10V
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
Ω
50
Ω
R
1
V
CE(sat)
V
V
V
V
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
= 0.25mA
I
C
= 50mA, I
B
=1.25mA
0.12
0.20
Base-Emitter
Saturation Voltage
V
BE(SAT)
0.60
0.70
0.70
0.83
Base - Emitter Voltage
V
BE
0.55
0.52
0.65
0.78
220
Static BCW60A
Forward
Current
Transfer BCW60B
Ratio
310
Min.
2.5
h
FE
120
50
78
170
20
180
70
460
145
250
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group B
Typ.
3.6
2
260
24
50
Max.
6.0
h
FE
Group C
Min.
3.2
Typ.
4.5
2
330
30
60
Max.
8.5
h
FE
Group D
Min.
4.5
Typ.
7.5
3
520
50
100
µ
S
BCW60C
BCW60D
630
I
C
=10mA, V
CE
=5V
f = 100MHz
V
EBO
=0.5V, f =1MHz
V
CBO
=10V, f =1MHz
40
250
90
220
350
Max.
12
k
Ω
10
-4
100
380
100
300
500
Transition Frequency
f
T
125
250
Emitter-Base Capacitance
pF
C
ebo
8
Collector-Base Capacitance
C
cbo
SWITCHING CIRCUIT
-V
BB
V
CC
(+10V)
Noise Figure
N
2
R
2
R
L
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
150
800
ns
ns
ns
ns
ns
ns
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
I
C
:I
B1
:- I
B2
=10:1:1mA
R
1
=5K
Ω,
R
2
=5K
Ω
V
BB
=3.6V, R
L
=990
Ω
t
r
< 5nsec
Z
in
≥
100k
Ω
Oscilloscope
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
Spice parameter data is available upon request for this device
PAGE NO
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
