5962R0520801VXC datasheet, PDF

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5962R0520801VXC: DescriptionStandard SRAM, 512KX8, 17ns, CMOS; Categorystorage storage; File Size352KB，14 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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5962R0520801VXC Overview

Standard SRAM, 512KX8, 17ns, CMOS

5962R0520801VXC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microchip
package instruction	0.500 INCH, DFP-36
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	17 ns
I/O type	COMMON
JESD-30 code	R-XDFP-F36
JESD-609 code	e4
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DFP
Encapsulate equivalent code	FL36,.5
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
power supply	3.3 V
Certification status	Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	3.05 mm
Maximum standby current	0.0015 A
Minimum standby current	2 V
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	300k Rad(Si) V
width	12.195 mm
Base Number Matches	1

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Features

•

Operating Voltage: 3.3V, 5V tolerant

•

Access Time:

•

– 17 ns

– 15 ns

Very Low Power Consumption

– Active: 610 mW (Max) @ 17 ns

(1)

, 540 mW (Max) @ 25 ns

– Standby: 3.3 mW (Typ)

Wide Temperature Range: -55 to +125°C

TTL-Compatible Inputs and Outputs

Asynchronous

Designed on 0.25 µm Radiation Hardened Process

No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm

@125°C

Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

500 Mils Wide FP36 Package

ESD Better than 2000V

Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208

1. 650 mW (Max) @ 15 ns

Note:

Description

The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns over the full military temperature range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

The AT60142FT is processed according to the methods of the latest revision of the

MIL PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rad Hard

512K x 8

5V Tolerant

Very Low Power

CMOS SRAM

AT60142FT

7726C–AERO–05/10

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