BT139B series E
Triacs; sensitive gate
Rev. 03 — 23 September 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT404 SMD plastic package.
1.2 Features
s
High sensitivity in all four quadrants.
1.3 Applications
s
General purpose bidirectional switching
s
Phase control.
1.4 Quick reference data
s
V
DRM
≤
600 V (BT139B-600E)
s
V
DRM
≤
800 V (BT139B-800E)
s
I
T(RMS)
≤
16 A
s
I
TSM
≤
155 A
s
I
GT
≤
10 mA (T2+ G+; T2+ G−; T2− G−)
s
I
GT
≤
25 mA (T2− G+).
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base, connected to main
terminal 2 (T2)
mb
Simplified outline
Symbol
T2
sym051
T1
G
2
1
3
SOT404 (D
2
-PAK)
Philips Semiconductors
BT139B series E
Triacs; sensitive gate
3. Ordering information
Table 2:
Ordering information
Package
Name
BT139B-600E
BT139B-800E
-
Description
plastic single-ended surface mounted package (Philips version of
D
2
-PAK); 3 leads (one lead cropped)
Version
SOT404
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BT139B-600E
BT139B-800E
I
T(RMS)
RMS on-state current
full sinewave;
T
mb
≤
99
°C;
Figure 4
and
Figure 5
[1]
Conditions
Min
-
-
-
Max
600
800
16
Unit
V
V
A
I
TSM
non-repetitive peak on-state current full sine wave;
T
j
= 25
°C
prior to
surge;
Figure 2
and
Figure 3
t = 20 ms
t = 16.7 ms
-
-
-
155
170
120
A
A
A
2
s
I
2
t
dI
T
/dt
I
2
t for fusing
repetitive rate of rise of on-state
current after triggering
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
-
-
-
-
-
-
-
50
50
50
10
2
5
5
0.5
+150
125
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
2 of 12
Philips Semiconductors
BT139B series E
Triacs; sensitive gate
25
P
tot
(W)
20
α
=
180
120
90
15
60
30
10
001aab093
95
T
mb(max)
(°C)
101
107
α
113
5
α
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
α
= conduction angle.
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
160
I
TSM
(A)
120
T
t
T
j(initial)
= 25
°C
max
I
T
001aab102
I
TSM
80
40
0
1
10
10
2
n
10
3
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;
maximum values.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
3 of 12
Philips Semiconductors
BT139B series E
Triacs; sensitive gate
10
3
001aab092
I
TSM
(A)
10
2
(1)
I
T
I
TSM
(2)
T
t
T
j(initial)
= 25
°C
max
10
10
−2
10
−1
1
10
T (ms)
10
2
t
p
≤
20 ms.
(1) dI
T
/dt limit.
(2) T2− G+ quadrant.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
001aab090
50
I
T(RMS)
(A)
40
20
I
T(RMS)
(A)
15
001aab091
(1)
30
10
20
5
10
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
≤
99
°C.
(1) T
mb
= 99
°C.
Fig 4. RMS on-state current as a function of surge
duration; maximum values.
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
4 of 12
Philips Semiconductors
BT139B series E
Triacs; sensitive gate
5. Thermal characteristics
Table 4:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
full cycle;
Figure 6
half cycle;
Figure 6
minimum footprint;
FR4 printed-circuit board
Min
-
-
-
Typ
-
-
55
Max
1.2
1.7
-
Unit
K/W
K/W
K/W
R
th(j-a)
10
Z
th(j-mb)
(K/W)
1
(2)
001aab098
(1)
10
−1
P
D
10
−2
t
p
t
10
−3
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional.
(2) Bidirectional.
Fig 6. Transient thermal impedance as a function of pulse width.
9397 750 13438
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 23 September 2004
5 of 12
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