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KM41V4000DT-7

Description
Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
Categorystorage    storage   
File Size341KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41V4000DT-7 Overview

Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20

KM41V4000DT-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP
package instructionTSOP2, TSOP20/26,.36
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PDSO-G20
JESD-609 codee0
length17.14 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP20/26,.36
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height1.2 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
Base Number Matches1
KM41C4000D, KM41V4000D
CMOS DRAM
4M x 1Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and
package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and
Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.
This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-
formance microprocessor systems.
FEATURES
• Part Identification
- KM41C4000D/D-L(5V, 1K Ref.)
- KM41V4000D/D-L(3.3V, 1K Ref.)
• Fast Page Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (3.3V, L-ver only)
• Fast parallel test mode capability
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Common I/O using early write
Active Power Dissipation
Unit : mW
Speed
-5
-6
-7
3.3V
-
220
200
5V
470
415
360
• JEDEC Standard pinout
• Available in 26(20)-pin SOJ 300mil and TSOP(II)
300mil packages
• +5V±10% power supply(5V product)
• +3.3V±0.3V power supply(3.3V product)
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
KM41C4000D
KM41V4000D
Refresh
cycle
1K
Refresh Period
Normal
16ms
L-ver
128ms
Refresh Timer
Refresh Control
RAS
CAS
W
Control
Clocks
VBB Generator
Vcc
Vss
Row Decoder
Sense Amps & I/O
Data in
Buffer
D
Performance Range
Speed
-5
-6
-7
Refresh Counter
Memory Array
4,194,304 x1
Cells
t
RAC
50ns
60ns
70ns
t
CAC
15ns
t
RC
t
PC
Remark
5V only
5V/3.3V
5V/3.3V
A0~A9
Row Address Buffer
Col. Address Buffer
Column Decoder
90ns 35ns
15ns 110ns 40ns
20ns 130ns 45ns
Data out
Buffer
Q
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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