Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
suitable for surface mounting using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in DC-DC
converters and general purpose
switching applications.
PHB69N03T
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
30
69
125
175
14
UNIT
V
A
W
˚C
mΩ
PINNING - SOT404
PIN
1
2
3
mb
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2
1
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
30
30
20
69
48
240
125
175
UNIT
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
minimum footprint, FR4
board
TYP.
-
50
MAX.
1.2
-
UNIT
K/W
K/W
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
December 1997
1
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
STATIC CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
(BR)GSS
R
DS(ON)
PARAMETER
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
T
j
= -55˚C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175˚C
T
j
= -55˚C
V
DS
= 30 V; V
GS
= 0 V;
V
GS
=
±10
V; V
DS
= 0 V
I
G
=
±1
mA;
V
GS
= 10 V; I
D
= 25 A
T
j
= 175˚C
T
j
= 175˚C
T
j
= 175˚C
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
12
-
PHB69N03T
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
14
26
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T
mb
= 25˚C unless otherwise specified
SYMBOL
g
fs
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
PARAMETER
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
I
D
= 69 A; V
DD
= 24 V; V
GS
= 10 V
MIN.
9
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
18
38
7
14
1500
480
220
22
30
40
25
3.5
4.5
7.5
MAX.
-
-
-
-
2000
550
300
35
60
50
38
-
-
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 25 V; I
D
= 25 A;
V
GS
= 10 V; R
G
= 5
Ω
Resistive load
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL
I
DR
I
DRM
V
SD
t
rr
Q
rr
PARAMETER
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
CONDITIONS
MIN.
-
I
F
= 25 A; V
GS
= 0 V
I
F
= 69 A; V
GS
= 0 V
I
F
= 69 A; -dI
F
/dt = 100 A/µs;
V
GS
= -10 V; V
R
= 25 V
-
-
-
-
-
TYP.
-
-
0.95
1.0
60
0.1
MAX.
69
240
1.2
-
-
-
UNIT
A
A
V
V
ns
µC
December 1997
2
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL
W
DSS
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 36 A; V
DD
≤
15 V;
V
GS
= 10 V; R
GS
= 50
Ω;
T
mb
= 25 ˚C
MIN.
-
TYP.
-
PHB69N03T
MAX.
125
UNIT
mJ
December 1997
3
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
PHB69N03T
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx55-lv
1
D=
0.5
0.2
0.1
0.05
0.02
0
P
D
t
p
D=
t
p
T
t
1E+01
0.1
0.01
0
20
40
60
80 100
Tmb / C
120
140
160
180
0.001
1E-07
T
1E-05
1E-03
t/s
1E-01
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
mb
)
ID%
Normalised Current Derating
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
ID / A
16
120
110
100
90
80
70
60
50
40
30
20
10
0
100
BUK7514-30
8
10
6.5
80
12
60
6
5.5
5
40
20
4.4
4
0
2
4
VDS / V
6
8
10
0
20
40
60
80 100
Tmb / C
120
140
160
180
0
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.5. Typical output characteristics, T
j
= 25 ˚C.
I
D
= f(V
DS
); parameter V
GS
RDS(ON) / mOhm
40
5
5.5
6
6.5
1000
ID / A
7514-30
7514-30
100
R
)
(ON
DS
D
=V
S/
ID
tp = 10 us
100 us
30
20
VGS / V =
8
10
1 ms
10
10 ms
100 ms
10
12
16
1
1
10
VDS / V
100
0
0
20
40
ID / A
60
80
100
Fig.3. Safe operating area. T
mb
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.6. Typical on-state resistance, T
j
= 25 ˚C.
R
DS(ON)
= f(I
D
); parameter V
GS
December 1997
4
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
PHB69N03T
ID / A
100
Tj / C = 25
175
7514-30
5
VGS(TO) / V
max.
BUK759-60
80
4
typ.
3
min.
60
40
2
20
1
0
0
2
4
VGS / V
6
8
10
0
-100
-50
0
50
Tj / C
100
150
200
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Sub-Threshold Conduction
gfs / S
30
7514-30
1E-01
Tj / C = 25
20
175
1E-02
2%
typ
98%
1E-03
10
1E-04
1E-05
0
0
20
40
ID / A
60
80
1E-06
0
1
2
3
4
5
Fig.8. Typical transconductance, T
j
= 25 ˚C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
a
2
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
C / pF
10000
30V TrenchMOS
7514-30
1.5
Ciss
1
1000
Coss
0.5
Crss
0
-100
-50
0
50
Tj / C
100
150
200
100
0.1
1
VDS / V
10
100
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 25 A; V
GS
= 10 V
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
December 1997
5
Rev 1.200
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