BX6526PM datasheet, PDF - EEWORLD Datasheet

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BX6526PM: Description10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1; CategoryWireless rf/communication Radio frequency and microwave; File Size121KB，1 Pages; ManufacturerSpectrum Microwave

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BX6526PM Overview

10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1

BX6526PM Parametric

Parameter Name	Attribute value
Maker	Spectrum Microwave
Reach Compliance Code	unknown
Other features	I/P POWER-MAX (PEAK)=27DBM
structure	COAXIAL
Gain	26 dB
Maximum input power (CW)	13 dBm
Maximum operating frequency	500 MHz
Minimum operating frequency	10 MHz
Maximum operating temperature	85 °C
Minimum operating temperature	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2
Base Number Matches	1

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RF AMPLIFIER

MODEL

Features

!

Superior Phase Noise Performance

High Gain 28 dB Typical

Operating Temp. - 55 ºC

to +85

ºC

Environmental Screening Available

Available as:

TM6526PM, 4 Pin TO-8 (T4)

TN6526PM, 4 Pin Surface Mount (SM3)

FP6526PM, 4 Pin Flatpack (FP4)

BX6526PM,Connectorized Housing (H1)

Typical Intermodulation Performance at 25 º C

Second Order Harmonic Intercept Point........+56 dBm (Typ.)

Second Order Two Tone Intercept Point.........+50 dBm (Typ.)

Third Order Two Tone Intercept Point.............+34 dBm (Typ.)

Maximum Ratings

Ambient Operating Temperature .............. -55ºC to + 100 ºC

Storage Temperature ............................... -62ºC to + 125 ºC

Case Temperature ................................................. + 125 ºC

DC Voltage ......................................................... + 18 Volts

Continuous RF Input Power ................................. + 13 dBm

Short Term RF Input Power ..... 50 Milliwatts (1 Minute Max.)

Maximum Peak Power .................... 0.5 Watt (3

µsec

Max.)

Note: Care should always be taken to effectively ground the case of each unit.

Specifications

CHARACTERISTIC

Frequency

Gain (dB)

Power @ 1 dB

Comp. (dBm)

Reverse

Isolation (dB)

VSWR

In

Out

Noise figure (dB)

Power

Vdc

mA

TYPICAL

Ta= 25 ºC

10-500

28

20.5

-38

<1.5:1

<3.75

+15

93

MIN/MAX

Ta = -55 ºC to +85 ºC

10-500 MHz

26 Min

18.5 Min.

-35

2.0:1 Max.

4.0 Max.

+15

96 Max.

Guaranteed Phase Noise Performance

(dBc/Hz)

Frequency

100 Hz

1 kHz

10 kHz

100 kHz

1 MHz

Typical

-153

-161

-163

-164

Guarantee

-150

-157

-159

-160

Typical Performance Data

Legend

+ 25 ºC

+ 85 ºC - - - - - - -55 ºC

2707 Black Lake Place, Philadelphia, PA 19154

TEL 215-464-4000

· · · ·

FAX 215-464-4001

BX6526PM Related Products

	BX6526PM	TM6526PM	FP6526PM	TN6526PM
Description	10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, H1	10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, T4, TO-8, 4 PIN	10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, FP-4	10 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SM3, 4 PIN
Maker	Spectrum Microwave	Spectrum Microwave	Spectrum Microwave	Spectrum Microwave
Reach Compliance Code	unknown	unknown	unknown	unknow
Other features	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM	I/P POWER-MAX (PEAK)=27DBM
structure	COAXIAL	COMPONENT	COMPONENT	COMPONENT
Gain	26 dB	26 dB	26 dB	26 dB
Maximum input power (CW)	13 dBm	13 dBm	13 dBm	13 dBm
Maximum operating frequency	500 MHz	500 MHz	500 MHz	500 MHz
Minimum operating frequency	10 MHz	10 MHz	10 MHz	10 MHz
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
RF/Microwave Device Types	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Maximum voltage standing wave ratio	2	2	2	2

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