FJX3010RTF datasheet, PDF - EEWORLD Datasheet

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FJX3010RTF: Descriptiontrans prebias npn 200mw sot323; CategoryDiscrete semiconductor The transistor; File Size36KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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FJX3010RTF Overview

trans prebias npn 200mw sot323

FJX3010RTF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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FJX3010R

Switching Application

(Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R=10KΩ)

• Complement to FJX4010R

SOT-323

1. Base 2. Emitter 3. Collector

Marking

Equivalent Circuit

S10

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Parameter

Value

100

200

150

-55 ~ 150

Units

°C

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

CEO

CBO

(sat)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Input Resistor

Test Condition

=100µA, I

=1mA, I

=30V, I

=5V, I

=1mA

=10mA, I

=1mA

=10V, I

f=1MHz

=10V, I

=5mA

3.7

250

100

Min.

0.1

600

0.3

MHz

KΩ

Typ.

Max.

Units

µA

Rev. A3, August 2002

FJX3010RTF Related Products

	FJX3010RTF
Description	trans prebias npn 200mw sot323
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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