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XNCA-017-1200BJ

Description
CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 93 V, 0.000012 uF, SURFACE MOUNT, 0202, CHIP
CategoryPassive components    capacitor   
File Size104KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

XNCA-017-1200BJ Overview

CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 93 V, 0.000012 uF, SURFACE MOUNT, 0202, CHIP

XNCA-017-1200BJ Parametric

Parameter NameAttribute value
Objectid2023947866
package instruction, 0202
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL6.92
capacitance0.000012 µF
Capacitor typeFILM CAPACITOR
dielectric materialsSILICON DIOXIDE AND NITRIDE
Manufacturer's serial numberNC
Installation featuresSURFACE MOUNT
negative tolerance5%
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package shapeRECTANGULAR PACKAGE
method of packingTRAY
positive tolerance5%
Rated (DC) voltage (URdc)93 V
size code0202
surface mountYES
Terminal shapeFLAT
NC Series
Vishay Electro-Films
Thin Film Single Value
Chip and Wire Capacitors
FEATURES
Product may not
be to scale
Wire bondable
Small size: 0.020 to 0.060 inches square
Substrate: Silicon with gold backing
Dielectric: Silicon dioxide/silicon nitride
The NC series of thin film capacitors has the advantage of
increased performance and smaller size when compared
with its thick film counterparts. These chips are available in
sizes down to 20 mil square and in capacitances up to
1000 pF.
Parts require epoxy or eutectic die attach to substrate and
one wire bond.
These chips are manufactured using Vishay Electro-Films
(EFI) sophisticated Thin Film equipment and manufacturing
technology. The NC’s are 100 % electrically tested and
visually inspected to MIL-STD-883.
Capacitance range: 0.5 pF to 1000 pF
CHIP
CAPACITORS
APPLICATIONS
The NC series of capacitor chips are designed for assembly in hybrid circuits using conventional wire-bonding techniques. They
provide excellent stability and performance, and their small size gives the hybrid designer greater layout flexibility. They are
available as MNOS or MOS capacitors. The MOS version is to be preferred when low dielectric absorption is required.
ELECTRICAL SCHEMATIC
NCA/NCB/NCC
TOP BONDING PADS
ELECTRICAL SCHEMATIC
NCD/NCE
TOP BONDING PADS
BACK OF CHIP
BACK OF CHIP
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
Peak Voltage at + 25 °C
Dissipation Factor, 1 kHz, 1 V
RMS
, + 25 °C
Q at 1 mHz, 50 mV
RMS
, + 25 °C
TCC, - 55 °C to + 150 °C
Insulation Resistance at Working Voltage, + 25 °C
Operating Temperature Range
Thermal Shock
Moisture Resistance, MIL-STD-202, Method 106
Short Time Overload, + 25 °C, 5 s, 1.5 x Working Voltage
High Temperature Exposure, 100 h at 150 °C Ambient
Life, MIL-STD-202, Method 108
Condition D, + 125 °C Ambient, 100 h at Working Voltage
Document Number: 61033
Revision: 14-Mar-08
1.5 x working voltage
0.05 % MNOS
0.1 % MOS
1000 min.
+ 45 ± 25 ppm/°C MNOS
+ 15 ± 25 ppm/°C MOS
10
9
min.
- 55 °C to + 125 °C
± 0.25 % + 0.25 pF max.
ΔC/C
± 1.0 % + 0.25 pF max.
ΔC/C
± 0.25 % + 0.25 pF max.m
± 0.25 % + 0.25 pF max.
ΔC/C
± 0.25 % + 0.25 pF max.
ΔC/C
For technical questions, contact: efi@vishay.com
www.vishay.com
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