A Product Line of
Diodes Incorporated
ZTX758
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR IN E-LINE
Features
BV
CEO
> -400V
I
C
= -0.5A High Continuous Collector Current
I
CM
= -1A Peak Pulse Current
T
J
up to +200°C for High Temperature Operation
Low Saturation Voltage < -0.25V @ -50mA
P
D
= 1W Power dissipation
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: E-Line (TO-92 Compatible)
Case Material: molded plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.159 grams (approximate)
E-Line
(TO-92 Compatible)
C
Part Mark on
Rounded Face
B
C B E
Bottom View
Ejection Mark
on Flat Face
E
C B E
Flat Face View
Device Symbol
C
B
E
Rounded Face View
Pin-Out Configuration
Ordering Information
(Notes 4)
Part Number
ZTX758
ZTX758STZ
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
ZTX758
ZTX758
Case
E-Line
E-Line
Leads
Straight
Joggled
Quantity
4,000 loose in a Box
2,000 taped per Ammo Box
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZTX
758
ZTX758 = Product Type Marking Code
Rounded Face View
ZTX758
Document number: DS33299 Rev. 2 - 2
1 of 7
www.diodes.com
August 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX758
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-400
-400
-7
-0.5
-1
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient (Note 5)
Thermal Resistance Junction to Ambient (Note 6)
Thermal Resistance Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
P
D
P
D
R
θJA
R
θJA
R
θJL
T
J,
T
STG
Value
1.5
1
116
175
70
-55 to +200
Unit
W
W
°C/W
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZTX758
Document number: DS33299 Rev. 2 - 2
2 of 7
www.diodes.com
August 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX758
Thermal Characteristics and Derating Information
ZTX758
Document number: DS33299 Rev. 2 - 2
3 of 7
www.diodes.com
August 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX758
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Min
-400
-400
-7
—
—
—
—
—
50
50
40
50
—
—
—
Typ
—
—
—
—
Max
—
—
—
-100
-100
-300
-250
-500
-0.9
-0.9
—
Unit
V
V
V
nA
nA
mV
V
V
—
Test Condition
I
C
= -100µA
I
C
= -1mA
I
E
= -100µA
V
CB
= -320V
V
EB
= -6V
I
C
= -20mA, I
B
= -1mA
I
C
=-50mA, I
B
= -5mA
I
C
=-100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -100mA
I
C
= -100mA, V
CE
= -5V
I
C
= -1mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
I
C
= -200mA, V
CE
= -10V
V
CE
= -20V, I
C
= -20mA
f = 20MHz
V
CB
= -20V. f = 1MHz
I
C
= -100mA, I
B1
= 10mA,
I
B2
= -20mA, V
C
= -100V
—
—
—
—
—
Current Gain-Bandwidth Product (Note 9)
Output Capacitance (Note 9)
Turn-On Times
Turn-Off Times
Note:
f
T
C
obo
t
on
t
off
—
—
140
2000
—
20
—
—
MHz
pF
ns
ns
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
ZTX758
Document number: DS33299 Rev. 2 - 2
4 of 7
www.diodes.com
August 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZTX758
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
ZTX758
Document number: DS33299 Rev. 2 - 2
5 of 7
www.diodes.com
August 2013
© Diodes Incorporated
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