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3LP04CH

Description
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,200MA I(D),SOT-346
CategoryDiscrete semiconductor    The transistor   
File Size54KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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3LP04CH Overview

TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,200MA I(D),SOT-346

3LP04CH Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.6 W
surface mountYES
Base Number Matches1
Ordering number : ENA1212
3LP04CH
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
3LP04CH
Features
General-Purpose Switching Device
Applications
1.5V drive.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
2
✕0.8mm)
Conditions
Ratings
--30
±10
--200
--800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=-
-1mA, VGS=0V
VDS=-
-30V, VGS=0V
VGS=±8V, VDS=0V
VDS=-
-10V, ID=--100μA
VDS=-
-10V, ID=--100mA
ID=-
-100mA, VGS=-
-4V
ID=-
-50mA, VGS=-
-2.5V
ID=-
-10mA, VGS=-
-1.5V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
--0.4
190
320
1.8
2.4
4.5
35
7.2
2.1
2.4
3.4
9.0
Ratings
min
--30
--1
±10
--1.4
typ
max
Unit
V
μA
μA
V
mS
Ω
Ω
Ω
pF
pF
pF
Marking : WA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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