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BFP640H6433

Description
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, ROHS COMPLIANT PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size150KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BFP640H6433 Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, ROHS COMPLIANT PACKAGE-4

BFP640H6433 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
Other featuresLOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)0.05 A
Collector-based maximum capacity0.2 pF
Collector-emitter maximum voltage4 V
ConfigurationSINGLE
highest frequency bandC BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON GERMANIUM
Nominal transition frequency (fT)40000 MHz
Base Number Matches1
BFP640
NPN Silicon Germanium RF Transistor
High gain low noise RF transistor
Provides outstanding performance
for a wide range of wireless applications
Ideal for CDMA and WLAN applications
Outstanding noise figure
F
= 0.65 dB at 1.8 GHz
Outstanding noise figure
F
= 1.2 dB at 6 GHz
High maximum stable gain
G
ms
= 24 dB at 1.8 GHz
Gold metallization for extra high reliability
70 GHz
f
T
-Silicon Germanium technology
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP640
1
Pb-containing
Marking
R4s
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
package may be available upon special request
2007-05-29
1
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