FSBM30SH60A
FSBM30SH60A
SPM
TM
(Smart Power Module)
General Description
FSBM30SH60A is an advanced smart power module
(SPM) that Fairchild has newly developed and designed to
provide very compact and high performance ac motor
drives mainly targeting high speed low-power inverter-
driven application like washing machines. It combines
optimized circuit protection and drive matched to low-loss
IGBTs. Highly effective short-circuit current detection/
protection is realized through the use of advanced current
sensing IGBT chips that allow continuous monitoring of the
IGBTs current. System reliability is further enhanced by the
integrated under-voltage lock-out protection. The high
speed built-in HVIC provides opto-coupler-less IGBT gate
driving capability that further reduce the overall size of the
inverter system design. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling
the FSBM30SH60A to be driven by only one drive supply
voltage without negative bias. Inverter current sensing
application can be achieved due to the divided negative dc
terminals.
Features
• UL Certified No. E209204
• 600V-30A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection
• Divided negative dc-link terminals for inverter current
sensing applications
• Single-grounded power supply due to built-in HVIC
• Typical switching frequency of 15kHz
• Inverter power rating of 2.4kW / 100~253 Vac
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
• Adjustable current protection level by varying series
resistor value with sense-IGBTs
Applications
• AC 100V ~ 253V 3-phase inverter drive for small power
(2.4kW) ac motor drives
• Home appliances applications requiring high switching
frequency operation like washing machines drive system
• Application ratings:
- Power : 2.4kW / 100~253 Vac
- Switching frequency : Typical 15kHz (PWM Control)
- 100% load current : 11A (Irms)
- 150% load current : 16.5A (Irms) for 1 minute
External View
Top View
Bottom View
60mm
31mm
Fig. 1.
©2003 Fairchild Semiconductor Corporation
Rev. E, August 2003
FSBM30SH60A
Integrated Power Functions
• 600V-30A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 13 and 14.
• For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
(1) V
CC(L)
(2) com
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) com
(L)
(7) FO
(8) C
FOD
(9) C
SC
(10) R
SC
(11) IN
(UH)
(12) V
CC(UH)
(13) V
B(U)
(14) V
S(U)
(15) IN
(VH)
(16) com
(H)
(17) V
CC(VH)
(18) V
B(V)
(19) V
S(V)
(20) IN
(WH)
(21) V
CC(WH)
(22) V
B(W)
(23) V
S(W)
(24) NC
(25) NC
(26) N
U
(27) N
V
(28) N
W
(29) U
Case Temperature (T
C
)
Detecting Point
(30) V
(31) W
Ceramic Substrate
(32) P
Fig. 2.
©2003 Fairchild Semiconductor Corporation
Rev. E, August 2003
FSBM30SH60A
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
COM
(L)
V
FO
C
FOD
C
SC
R
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
COM
(H)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
NC
NC
N
U
N
V
N
W
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Low-side Common Supply Ground
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Resistor for Short-Circuit Current Detection
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Supply Ground
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
No Connection
No Connection
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
©2003 Fairchild Semiconductor Corporation
Rev. E, August 2003
FSBM30SH60A
Internal Equivalent Circuit and Input/Output Pins
Bottom View
(22) V
B(W )
(21) V
C C(W H )
(20) IN
(W H )
(23) V
S(W )
(18) V
B(V )
(17) V
C C(VH )
(16) C O M
(H )
(15) IN
(VH )
(19) V
S(V )
(13) V
B(U )
(12) V
C C(UH )
(11) IN
(U H )
(14) V
S(U )
(10) R
SC
(9) C
SC
(8) C
FO D
(7) V
FO
(6) C O M
(L)
(5) IN
(W L)
(4) IN
(VL)
(3) IN
(U L)
(2) C O M
(L)
(1) V
C C(L)
VB
VC C
COM
IN
OUT
VS
(32) P
(31) W
VB
VC C
COM
IN
OUT
VS
(30) V
VB
VC C
COM
IN
VS
(29) U
OUT
C (S C )
C (F O D )
VF O
O U T (W L)
(28) N
W
IN (W L)
IN (V L)
IN (U L)
C O M (L)
VC C
(26) N
U
(25) N C
(24) N C
O U T (U L)
O U T (V L)
(27) N
V
Note:
1) Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current sensing and
protection functions.
2) Inverter power side is composed of four inverter dc-link input pins and three inverter output pins.
3) Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
©2003 Fairchild Semiconductor Corporation
Rev. E, August 2003
FSBM30SH60A
Absolute Maximum Ratings
Inverter Part
Item
Supply Voltage
Supply Voltage (Surge)
Collector-Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
(T
J
= 25°C, Unless Otherwise Specified)
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
C
± I
CP
P
C
T
J
Condition
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C,
Instantaneous Value (Pulse)
T
C
= 25°C per One Chip
(Note 1)
Rating
450
500
600
30
15
60
62
-20 ~ 125
Unit
V
V
V
A
A
A
W
°C
Note:
1. It would be recommended that the average junction temperature should be limited to T
J
≤
125°C (@T
C
≤
100°C) in order to guarantee safe operation.
Control Part
Item
Control Supply Voltage
High-side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Symbol
Condition
V
CC
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
- COM
(H)
,
V
CC(L)
- COM
(L)
V
BS
V
IN
V
FO
I
FO
V
SC
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
- COM
(H)
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
(L)
Applied between V
FO
- COM
(L)
Sink Current at V
FO
Pin
Applied between C
SC
- COM
(L)
Rating
20
20
-0.3 ~ V
CC
+0.3
-0.3 ~ V
CC
+0.3
5
-0.3 ~ V
CC
+0.3
Unit
V
V
V
V
mA
V
Total System
Item
Self Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Symbol
Condition
V
PN(PROT)
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 25°C, Non-repetitive, less than 6µs
T
C
T
STG
V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate
Note Fig.2
Rating
400
-20 ~ 100
-20 ~ 125
2500
Unit
V
°C
°C
V
rms
©2003 Fairchild Semiconductor Corporation
Rev. E, August 2003
京公网安备 11010802033920号
EEWORLD
