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HS1JFSM3G

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size378KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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HS1JFSM3G Overview

Rectifier Diode,

HS1JFSM3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid145144493696
Reach Compliance Codeunknown
Country Of OriginMainland China
ECCN codeEAR99
YTEOL1.08
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current35 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum repetitive peak reverse voltage600 V
Maximum reverse current1 µA
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal surfaceTIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
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