EEWORLDEEWORLDEEWORLD

Part Number

Search

PC48F4400P0VB00

Description
8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
Categorystorage    storage   
File Size1MB,102 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Environmental Compliance
Download Datasheet Parametric View All

PC48F4400P0VB00 Overview

8M X 16 FLASH 1.8V PROM, 85 ns, PDSO56

PC48F4400P0VB00 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerIntel
Parts packaging codeBGA
package instructionLEAD FREE, BGA-64
Contacts64
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time88 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B64
JESD-609 codee1
length13 mm
memory density536870912 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8, 510
Number of terminals64
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA64,8X8,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8,1.8/3.3 V
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.3 mm
Department size16K,64K
Maximum standby current0.000005 A
Maximum slew rate0.051 mA
Maximum supply voltage (Vsup)2 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitNO
typeNOR TYPE
width10 mm
Intel StrataFlash
®
Embedded Memory
(P30)
1-Gbit P30 Family
Datasheet
Product Features
Security
— 85/88 ns initial access
— One-Time Programmable Registers:
• 64 unique factory device identifier bits
— 40 MHz with zero wait states, 20 ns clock-to-
• 64 user-programmable OTP bits
data output synchronous-burst read mode
• Additional 2048 user-programmable OTP bits
— 25 ns asynchronous-page read mode
— Selectable OTP Space in Main Array:
— 4-, 8-, 16-, and continuous-word burst mode
• 4x32KB parameter blocks + 3x128KB main
— Buffered Enhanced Factory Programming
blocks (top or bottom configuration)
(BEFP) at 5 µs/byte (Typ)
— Absolute write protection: V
PP
= V
SS
— 1.8 V buffered programming at 7 µs/byte (Typ)
— Power-transition erase/program lockout
Architecture
— Individual zero-latency block locking
— Multi-Level Cell Technology: Highest Density
— Individual block lock-down
at Lowest Cost
Software
— Asymmetrically-blocked architecture
— 20 µs (Typ) program suspend
— Four 32-KByte parameter blocks: top or
— 20 µs (Typ) erase suspend
bottom configuration
— Intel
®
Flash Data Integrator optimized
— 128-KByte main blocks
— Basic Command Set and Extended Command
Voltage and Power
Set compatible
— V
CC
(core) voltage: 1.7 V – 2.0 V
— Common Flash Interface capable
— V
CCQ
(I/O) voltage: 1.7 V – 3.6 V
Density and Packaging
— Standby current: 55 µA (Typ) for 256-Mbit
— 64/128/256-Mbit densities in 56-Lead TSOP
— 4-Word synchronous read current:
package
13 mA (Typ) at 40 MHz
— 64/128/256/512-Mbit densities in 64-Ball
Quality and Reliability
Intel
®
Easy BGA package
— Operating temperature: –40 °C to +85 °C
• 1-Gbit in SCSP is –30 °C to +85 °C
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel
®
QUAD+ SCSP
— Minimum 100,000 erase cycles per block
— 16-bit wide data bus
— ETOX™ VIII process technology (130 nm)
High performance
The Intel StrataFlash
®
Embedded Memory (P30) product is the latest generation of Intel
StrataFlash
®
memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device
brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.
Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR
device, and support for code and data storage. Features include high-performance synchronous-
burst read mode, fast asynchronous access times, low power, flexible security options, and three
industry standard package choices.
The P30 product family is manufactured using Intel
®
130 nm ETOX™ VIII process technology.
Order Number: 306666, Revision: 001
April 2005

Recommended Resources

Popular Articles

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1716  1993  161  941  2034  35  41  4  19  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号