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MOC8204300

Description
optoiso 5.3kv trans W/base 6dip
CategoryLED optoelectronic/LED    photoelectric   
File Size228KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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optoiso 5.3kv trans W/base 6dip

MOC8204300 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instructionDIP-6
Reach Compliance Codecompliant
Other featuresVDE APPROVED
Coll-Emtr Bkdn Voltage-Min400 V
ConfigurationSINGLE
Current transmission ratio - minimum value20%
Nominal current transfer ratio20%
Maximum dark power100 nA
Maximum forward current0.06 A
Maximum forward voltage1.5 V
Maximum insulation voltage5300 V
JESD-609 codee3
Installation featuresTHROUGH HOLE MOUNT
Number of components1
Maximum on-state current0.1 A
Maximum operating temperature100 °C
Minimum operating temperature-55 °C
Optoelectronic device typesTRANSISTOR OUTPUT OPTOCOUPLER
surface mountNO
Terminal surfaceMatte Tin (Sn)
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M — High Voltage Phototransistor Optocouplers
January 2009
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M
High Voltage Phototransistor Optocouplers
Features
High voltage:
General Description
The 4N38M, H11DXM and MOC8204M are photo-
transistor-type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high
voltage NPN silicon phototransistor. The device is sup-
plied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BV
CER
= 400V
– H11D1M, H11D2M, BV
CER
= 300V
– H11D3M, BV
CER
= 200V
High isolation voltage:
– 7500 V
AC
peak, 1 second
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
IEC 60747-5-2 approved (ordering option V)
Applications
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
Schematic
Package Outlines
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.5
www.fairchildsemi.com
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