FDFS2P102
October 2000
FDFS2P102
Integrated P-Channel MOSFET and Schottky Diode
General Description
The FDFS2P102 combines the exceptional performance of
Fairchild's high cell density MOSFET with a very low forward
voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a variety
of DC/DC converter topologies.
Features
•
•
–3.3 A, –20 V.
R
DS(ON)
= 0.125
Ω
@ V
GS
= –10 V
R
DS(ON)
= 0.200
Ω
@ V
GS
= –4.5 V.
VF < 0.39 V @ 1 A (TJ = 125 oC).
VF < 0.47 V @ 1 A.
VF < 0.58 V @ 2 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
Electrically independent Schottky and MOSFET pinout for
design flexibility.
•
•
Applications
•
•
•
DC/DC converters
Load Switch
Motor Drives
D
D
C
C
A
1
A
2
G
S
A
8
7
C
C
S
3
G
4
6
D
5
D
Pin 1
A
T
A
=25
o
C unless otherwise noted
MOSFET Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
-20
±
20
(Note 1a)
Units
V
V
A
W
-3.3
-20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
°
C
T
J
, T
STG
Operating and Storage Temperature Range
T
A
=25 C unless otherwise noted
o
Schottky Diode Maximum Ratings
V
RRM
I
O
Repetitive Peak Reverse Voltage
Average Forward Current
20
(Note 1a)
V
A
1
Package Marking and Ordering Information
Device Marking
FDFS2P102
Device
FDFS2P102
Reel Size
13
Tape Width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor International
FDFS2P102 Rev. E
FDFS2P102
Electrical Characteristics
Symbol
Parameter
T
A
= 25 C unless otherwise noted
Test Conditions
V
GS
= 0 V, I
D
= -250
µ
A
V
DS
= - 16 V,
V
GS
= 0 V
T
J
= 55
°
C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -250
µ
A
V
GS
= -10 V, I
D
= -3.3 A
V
GS
= -4.5 V, I
D
= -2.5 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -3.3 A
Min
Typ
Max Units
Off Characteristics
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Forward Leakage
Gate-Body Reverse Leakage
(Note 2)
-20
-1
-10
100
-100
V
µ
A
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
-1
-1.4
0.100
0.167
-2
0.125
0.2
V
Ω
A
-10
5
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
270
150
45
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
Ω
8
7
17
10
16
14
27
1.8
10
ns
ns
ns
ns
nC
V
DS
= -5 V, I
D
= -3.3 A,
V
GS
= -10 V,
7
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -1.3 A
(Note 2)
-1.3
-0.8
-1.2
A
V
Schottky Diode Characteristics
I
R
V
F
Reverse Leakage
Forward Voltage
V
R
= 20 V
I
F
= 1 A
I
F
= 2 A
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
78
40
250
18
0.47
0.39
0.58
0.53
uA
mA
V
Thermal Characteristics
R
JA
R
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Notes:
1:
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a minimum
pad.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDFS2P102 Rev. E
FDFS2P102
Typical Characteristics
20
- I
D
, DRAIN-SOURCE CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
16
V
GS
= -10V
-7.0V
-6.0V
-5.0V
-4.5V
1.8
V
GS
= 4.0V
1.6
1.4
1.2
1
0.8
0
10
20
30
40
50
60
I
D
, DIRAIN CURRENT (A)
12
4.5V
5.0V
6.0V
7.0V
10V
8
-4.0V
4
-3.5V
0
0
1
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
5
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
R
DS(ON)
, ON-RESISTANCE (OHM)
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
o
I
D
= 7.6A
V
GS
= 10V
I
D
= 3.8A
0.05
T
A
= 125
o
C
0.04
0.03
0.02
0.01
0
125
150
3
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 25
o
C
Figure 3. On-Resistance Variation
with Temperature.
60
50
I
D
, DRAIN CURRENT (A)
40
30
20
10
0
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
T
A
= -55
o
C
25 C
125
o
C
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
V
GS
= 0V
10
1
0.1
-55
o
C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
FDFS2P102 Rev. E
FDFS2P102
Typical Characteristics
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7.6A
8
(continued)
2400
V
DS
= 10V
20V
40V
CAPACITANCE (pF)
2000
C
ISS
1600
1200
800
400
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
80
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
OSS
C
RSS
f = 1MHz
V
GS
= 0 V
6
4
2
0
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
I
F
, FORWARD CURRENT (A)
5
I
R
, R EVE R SE CU R R EN T (A )
0.001
2
1
TJ = 125 C
25 C
0.0005
TJ = 25 C
0.5
0.0002
0.2
0.1
0.0001
0
0.1
0.2
0.3
0.4
V
F
, FORWARD VOLTAGE (V)
0.5
0.6
0
5
10
15
V
R
, R EVER SE V OLTA GE (V)
20
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P(pk)
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=135 C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDFS2P102 Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
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FAST
®
DISCLAIMER
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GlobalOptoisolator™
GTO™
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MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench
®
QFET™
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QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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