PHOTONIC
DETECTORS INC.
0.145 [3.68]
High-Power GaAs Infrared Emitters
Peak Wavelength 940 nm,Type
PDI-E902
C
L
45°
0.040
[1.02]
0.145 [3.68]
C
L
0.082
[2.08]
Ø0.019 [0.48]
Ø0.016 [0.41]
C
L
Ø0.195 [4.95]
Ø0.178 [4.52]
0.100 [2.54]
CATHODE
C
L
L.E.D.
Ø0.212 [5.38]
Ø0.209 [5.31]
0.013 [0.33] SQ
Ø0.005 [Ø0.13]
CATHODE
BOTTOM SIDE ANODE
LENS CAP
(WELDED)
HEADER
ANODE & CASE
0.025 [0.64]
0.022 [0.56]
1.00 [25.4]
MIN
PACKAGE DIMENSIONS
inch (mm)
TO-46 HERMETIC CAN PACKAGE
40
O
HALF INTENSITY BEAM ANGLE
DESCRIPTION:
The
PDI-E902
infrared emitting
FEATURES
Hermetically sealed
diode uses high reliability liquid phase epitaxially
grown GaAs. Optimized for high power, high effi-
High reliablity
Medium emission angle
RELATIVE POWER OUTPUT (%)
ABSOLUTE MAXIMUM RATING
(TA=25
O
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
Pd
I
FP
I
FP
V
R
To & Ts
TS
Power Dissipation
Continuous Forward Current
Peak Forward Current (10µs, 10Hz)
Reverse voltage
Storage & Operating Temperature
Soldering Temperature*
160
100
2.5
5
+125
+260
mW
mA
A
V
o
C
o
C
ciency. This 940 nm emitter is packaged in a TO-46
header with a glass lens cap.
APPLICATIONS
Photo interrupters
I.R. remotes
Infrared sources
TYPICAL RADIATION PATTERN
100
80
60
40
20
0
-80 -60 -40 -20 0 20 40 60 80
BEAM ANGLE,
θ
(deg)
-65
*1/16 inch from case for 3 secs max
ELECTRO-OPTICAL CHARACTERISTICS
(TA=25
O
C unless otherwise noted)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
P
O
V
F
V
R
D
λ
D
MAX
1.50
960
UNITS
mW
V
V
nm
nm
pF
µ
S
m
S
λ
P
C
t
t
r
t
f
Output Power
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Spectral Halfwidth
Terminal Capacitance
Rise Time
Fall Time
I
F
- FORWARD CURRENT (mA)
I
F
= 20 mA
I
F
= 100 mA
I
F
= 10
µ
A
I
F
= 100 mA
I
F
= 100 mA
V
R
= 0 V,f = 1 MHz
I
F
= 100 mA
I
F
= 100 mA
FORWARD CURRENT vs
FORWARD VOLTAGE
1000
100
10
1.0
0.8
1.0
1.2
1.4
1.6
1.8
1
5
920
1.2
1.30
940
50
30
0.8
0.8
RELATIVE POWER OUTPUT (%)
POWER OUTPUT vs
FORWARD CURRENT
RELATIVE POWER , P
O
(%)
100
80
60
40
20
0
20
40
60
80
100
0
FORWARD CURRENT, I
F
(mA)
SPECTRAL OUTPUT
100
80
60
40
20
1000
900
920
940
960
980
0
2.0
0.1
V
F
- FORWARD VOLTAGE - (V)
WAVELENGTH,
λ
(nm)
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. Optical power and radiant intensity measured using uncapped dimpled TO-46 into integrating sphere.
Embedded System
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