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IRFG5110

Description
100V, Combination 2N-2P-CHANNEL
CategoryDiscrete semiconductor    The transistor   
File Size395KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRFG5110 Overview

100V, Combination 2N-2P-CHANNEL

IRFG5110 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
Parts packaging codeDIP
package instructionIN-LINE, R-CDIP-T14
Contacts14
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)75 mJ
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-036AB
JESD-30 codeR-CDIP-T14
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 90437D
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
IRFG5110
IRFG5110
R
DS(on)
0.7Ω
0.7Ω
I
D
1.0A
-1.0A
IRFG5110
100V, Combination 2N-2P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
®
CHANNEL
N
P
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 10V, TC = 25°C
ID @ VGS =± 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
N-Channel
1.0
0.6
4.0
1.4
0.011
±20
75
5.5
P-Channel
-1.0
-0.6
-4.0
1.4
0.011
Units
A
W
W/°C
±20
75
-5.5
-55 to 150
V
mJ
A
mJ
V/ns
o
C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
www.irf.com
1
04/16/02
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