PDM41258SA55DM datasheet, PDF - EEWORLD Datasheet

PDM41258SA55DM: DescriptionStandard SRAM, 64KX4, 55ns, CMOS, CDIP24; Categorystorage storage; File Size397KB，8 Pages; ManufacturerParadigm Technology Inc

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PDM41258SA55DM Overview

Standard SRAM, 64KX4, 55ns, CMOS, CDIP24

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1435347099
package instruction	DIP, DIP24,.3
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	24
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.13 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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