IRGP20B120UD-E datasheet, PDF - EEWORLD Datasheet

IRGP20B120UD-E: DescriptionINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; CategoryDiscrete semiconductor The transistor; File Size924KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRGP20B120UD-E Overview

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-247AD
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compli
Is Samacsys	N
Other features	ULTRA FAST
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)	350 ns
Gate emitter threshold voltage maximum	6 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	120 W
Certification status	Not Qualified
Maximum rise time (tr)	30 ns
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	228 ns
Nominal on time (ton)	70 ns
Base Number Matches	1

PD - 95602

IRGP20B120UD-EP

•

Lead-Free

www.irf.com

1

7/28/04

	IRGP20B120UD-E	IRGP20B120UD-EPPBF
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-247AD	TO-247AD
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	compli	unknown
Is Samacsys	N	N
Maximum collector current (IC)	40 A	40 A
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
JEDEC-95 code	TO-247AD	TO-247AD
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	228 ns	228 ns
Nominal on time (ton)	70 ns	70 ns
Base Number Matches	1	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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