PD-90720F
IRHN7150
JANSR2N7268U
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRHN7150
IRHN3150
IRHN4150
IRHN8150
Radiation Level
100 kRads(Si)
300 kRads(Si)
500 kRads(Si)
1000 kRads(Si)
RDS(on)
0.065
0.065
0.065
0.065
I
D
34A
34A
34A
34A
QPL Part Number
JANSR2N7268U
JANSF2N7268U
JANSG2N7268U
JANSH2N7268U
100V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard HEXFET TECHNOLOGY
SMD-1
Description
IR HiRel RAD-Harrd HEXFET technology provides high performance
power MOSFETs for space applications. This technology
has over a decade of proven performance and reliability in
satellite applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 12V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
For Footnotes, refer to the page 2.
1
300 (for 5s)
2.6 (Typical)
34
21
136
150
1.2
± 20
500
34
15
5.5
-55 to + 150
I
D
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
2016-06-30
IRHN7150
JANSR2N7268U
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
100
–––
–––
–––
2.0
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.13
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D
= 21A
V
GS
= 12V, I
D
= 34A
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 15V, I
D
= 21A
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 34A
V
DS
= 50V
V
GS
= 12V
V
DD
= 50V
I
D
= 34A
R
G
= 2.35
V
GS
= 12V
Measured from center of drain
pad to center of source pad
––– 0.065
––– 0.076
–––
4.0
––– –––
–––
25
––– 250
––– 100
––– -100
––– 160
–––
35
–––
65
–––
45
––– 190
––– 170
––– 130
4.0
4300
1200
200
–––
–––
–––
–––
ns
nH
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
34
136
1.4
570
5.8
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= 34A, V
GS
= 0V
T
J
= 25°C, I
F
= 34A, V
DD
≤
50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
R
JC
R
-PCB
Junction-to-Case
Junction-to-PC Board (soldered to 1 inch square cu clad board)
Min.
–––
–––
Typ.
–––
6.6
Max.
0.83
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L =0.86mH, Peak I
L
= 34A, V
GS
= 12V
V
I
SD
34A, di/dt
140A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias.
12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 80
volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
2016-06-30
IRHN7150
JANSR2N7268U
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
100 kRads (Si)
1
Min.
100
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
0.065
0.065
1.4
300k - 1000 kRads (Si)
2
Min.
100
1.25
–––
–––
–––
–––
–––
–––
Max.
–––
4.5
100
-100
50
0.090
0.090
1.4
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D
= 21A
V
GS
= 12V, I
D
= 21A
V
GS
= 0V, I
D
= 34A
Units
Test Conditions
1. Part number IRHN7150 (JANSR2N7268U)
2. Part numbers IRHN3150 (JANSF2N7268U), IRHN4150 (JANSG2N7268U) and IRHN8150 (JANSH2N7268U)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
VDS (V)
@VGS=0V
100
100
@VGS=-5V
100
90
@VGS=-10V @VGS=-15V @VGS=-20V
100
70
80
50
60
–––
120
100
80
VDS
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
2016-06-30
IRHN7150
JANSR2N7268U
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
FOR TEST CIRCUIT
SEE FIGURE 13
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2016-06-30
IRHN7150
JANSR2N7268U
Pre-Irradiation
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-06-30
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