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IRHN8150

Description
TRANSISTOR N-CHANNEL
CategoryDiscrete semiconductor    The transistor   
File Size284KB,14 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHN8150 Overview

TRANSISTOR N-CHANNEL

IRHN8150 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresRADIATION HARDENED
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)34 A
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)235 ns
Provisional Data Sheet No. PD-9.720A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
®
IRHN7150
IRHN8150
N-CHANNEL
MEGA RAD HARD
100 Volt, 0.055Ω, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 10
6
Rads (Si). Under
identical
pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain
identical
electrical specifi-
cations up to 1 x 10
5
Rads (Si) total dose. At 1 x 10
6
Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Product Summary
Part Number
IRHN7150
IRHN8150
BV
DSS
100V
100V
R
DS(on)
0.055Ω
0.055Ω
I
D
34A
34A
Features:
s
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
Œ
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy

Avalanche Current
Œ
Repetitive Avalanche Energy
Œ
Peak Diode Recovery dv/dt
Ž
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Radiation
IRHN7150, IRHN8150
Units
A
W
W/K

V
mJ
A
mJ
V/ns
o
C
300 (for 5 sec.)
2.6 (typical)
g

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