specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
and fast switching speed.
Features
•
75 A, 30 V
R
DS(ON)
= 6 mΩ @ V
GS
= 10 V
R
DS(ON)
= 8 mΩ @ V
GS
= 4.5 V
•
Low gate charge
•
Fast switching
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC/DC converter
•
Motor Drives
D
G
S
D
G
D-PAK
TO-252
(TO-252)
T
A
=25 C unless otherwise noted
o
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
Ratings
30
±
20
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Units
V
A
W
75
100
71
3.8
1.6
–55 to +175
Power Dissipation for Single Operation
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD6606
Device
FDD6606
Package
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2004
Fairchild Semiconductor Corporation
FDD6606 Rev B (W)
FDD6606
Electrical Characteristics
Symbol
W
DSS
I
AR
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Test Conditions
Single Pulse, V
DD
= 15 V, I
D
= 17 A
Min
Typ
Max
240
17
Units
mJ
A
Drain-Source Avalanche Ratings
(Note 2)
Off Characteristics
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
V
GS
= 0 V,
I
D
= 250
µA
30
20
10
±100
V
mV/°C
µA
nA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 24 V,
V
GS
=
±
20 V,
V
GS
= 0 V
V
DS
= 0 V
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 10 V,
I
D
= 17 A
I
D
= 15 A
V
GS
= 4.5 V,
V
GS
= 10 V, I
D
= 17 A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 17 A
1
1.9
–7
5
6
8
3
V
mV/°C
6.0
8.0
11.9
mΩ
I
D(on)
g
FS
C
iss
C
oss
C
rss
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
50
65
A
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 15 mV,
V
GS
= 0 V,
2400
577
258
1.4
pF
pF
pF
Ω
20
37
64
32
31
ns
ns
ns
ns
nC
nC
nC
f = 1.0 MHz
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
14
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
12
38
18
V
DS
= 15V,
V
GS
= 5 V
I
D
= 17 A,
24
10
11
FDD6606 Rev B (W)
FDD6606
Electrical Characteristics
(continued)
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
3.2
Units
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 17 A,
I
S
= 3.2 A
(Note 2)
0.7
32
20
1.2
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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