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BY399S(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,
CategoryDiscrete semiconductor    diode   
File Size59KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BY399S(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27,

BY399S(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current10 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
Low cost
GALAXY ELECTRICAL
BY396(Z)---BY399S(Z)
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 3.0 A
FAST RECOVERY RECTIFIER
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
396
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BY
397
200
140
200
BY
398
400
280
400
3.0
BY
399
800
560
800
BY
399S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
100.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.25
10.0
200.0
150
32
22
- 55---- +150
- 55---- +150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261023
BL
GALAXY ELECTRICAL
1.

BY399S(Z) Related Products

BY399S(Z) BY399(Z) BY397(Z) BY396(Z) BY398(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V 1.25 V 1.25 V
JEDEC-95 code DO-27 DO-27 DO-27 DO-27 DO-27
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A 100 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 1000 V 800 V 200 V 100 V 400 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.15 µs
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
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