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2A200HB12C2F

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size977KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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2A200HB12C2F Overview

Insulated Gate Bipolar Transistor,

2A200HB12C2F Parametric

Parameter NameAttribute value
Objectid8317368041
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL5.38
Shell connectionISOLATED
Maximum collector current (IC)294 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.4 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1100 W
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)480 ns
Nominal on time (ton)180 ns
VCEsat-Max2.25 V
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