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HVM187STR-E

Description
60V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size71KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

HVM187STR-E Overview

60V, SILICON, PIN DIODE

HVM187STR-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionR-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
applicationATTENUATOR
Minimum breakdown voltage60 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum diode capacitance2.4 pF
Diode component materialsSILICON
Maximum diode forward resistance5.5 Ω
Diode typePIN DIODE
frequency bandHIGH FREQUENCY
JESD-30 codeR-PDSO-G3
JESD-609 codee6
Humidity sensitivity level1
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature20
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