FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
December 2011
FOD814 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
■
AC input response (FOD814 only)
■
Applicable to Pb-free IR reflow soldering
■
Compact 4-pin package
■
Current transfer ratio in selected groups:
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
FOD814: 20–300%
FOD814A: 50–150%
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
■
C-UL, UL and VDE approved
■
High input-output isolation voltage of 5000Vrms
■
Minimum BV
CEO
of 70V guaranteed
■
Higher operating temperatures (versus H11AXXX
counterparts)
Applications
FOD814 Series
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
FOD817 Series
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Functional Block Diagram
ANODE, CATHODE 1
4 COLLECTOR
ANODE 1
4 COLLECTOR
CATHODE, ANODE 2
3 EMITTER
CATHODE 2
3 EMITTER
4
FOD814
FOD817
1
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
(T
A
= 25°C Unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Absolute Maximum Ratings
Value
Symbol
T
STG
T
OPR
T
SOL
T
J
θ
JC
P
TOT
EMITTER
I
F
V
R
P
D
DETECTOR
V
CEO
V
ECO
I
C
P
C
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate above 90°C
70
6
50
150
2.9
Continuous Forward Current
Reverse Voltage
Power Dissipation
Derate above 100°C
70
1.7
±50
50
6
Units
FOD817
°C
°C
°C
°C
°C/W
mW
mA
mW
mW/°C
V
V
mA
mW
mW/°C
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Junction-to-Case Thermal Resistance
Total Power Dissipation
FOD814
TOTAL DEVICE
-55 to +150
-55 to +105
-55 to +110
260 for 10 sec
125 Max.
210
200
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
2
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
C
t
DETECTOR
I
CEO
BV
CEO
BV
ECO
Collector Dark Current
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
FOD814
FOD817
FOD814
FOD817
FOD814
FOD817
V
CE
= 20V, I
F
= 0
V
CE
= 20V, I
F
= 0
I
C
= 0.1mA, I
F
= 0
I
C
= 0.1mA, I
F
= 0
I
E
= 10µA, I
F
= 0
I
E
= 10µA, I
F
= 0
70
70
6
6
V
100
100
V
nA
Forward Voltage
Reverse Leakage Current
Terminal Capacitance
FOD814
FOD817
FOD817
FOD814
FOD817
I
F
= ±20mA
I
F
= 20mA
V
R
= 4.0V
V = 0, f = 1kHz
V = 0, f = 1kHz
50
30
1.2
1.2
1.4
1.4
10
250
250
µA
pF
V
Parameter
Device
Test Conditions
Min.
Typ.*
Max.
Unit
DC Transfer Characteristics
Symbol
CTR
DC
Characteristic
Current Transfer
Ratio
Device
FOD814
FOD814A
FOD817
FOD817A
FOD817B
FOD817C
FOD817D
V
CE (sat)
Collector-Emitter
Saturation Voltage
FOD814
FOD817
I
F
= ±20mA, I
C
= 1mA
I
F
= 20mA, I
C
= 1mA
I
F
= 5mA, V
CE
=
5V
(1)
Test Conditions
I
F
= ±1mA, V
CE
= 5V
(1)
Min.
20
50
50
80
130
200
300
0.1
0.1
Typ.*
Max.
300
150
600
160
260
400
600
0.2
0.2
V
Unit
%
AC Transfer Characteristics
Symbol AC Characteristic
f
C
t
r
t
f
Cut-Off Frequency
Response Time (Rise)
Response Time (Fall)
Device
FOD814
FOD814,
FOD817
FOD814,
FOD817
Test Conditions
V
CE
= 5V, I
C
= 2mA, R
L
= 100Ω,
-3dB
V
CE
= 2 V, I
C
= 2mA, R
L
= 100Ω
(2)
Min.
15
Typ.* Max. Unit
80
4
3
18
18
kHz
µs
µs
*Typical values at T
A
= 25°C
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
3
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(Continued)
Isolation Characteristics
Symbol
V
ISO
R
ISO
C
ISO
Characteristic
Input-Output Isolation
Voltage
(3)
Isolation Resistance
Isolation Capacitance
Device
Test Conditions
Min.
5000
5x10
10
Typ.*
Max.
Units
Vac(rms)
FOD814, f = 60Hz, t = 1 min,
FOD817 I
I-O
≤
2µA
FOD814, V
I-O
= 500VDC
FOD817
FOD814, V
I-O
= 0, f = 1 MHz
FOD817
1x10
11
0.6
1.0
Ω
pf
*Typical values at T
A
= 25°C
Notes:
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
4
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics
(T
A
= 25°C Unless otherwise specified.)
COLLECTOR POWER DISSIPATION P
C
(mW)
COLLECTOR POWER DISSIPATION P
C
(mW)
Fig. 1 Collector Power Dissipation
vs. Ambient Temperature
(FOD814)
200
Fig. 2 Collector Power Dissipation
vs. Ambient Temperature
(FOD817)
200
150
150
100
100
50
50
0
-55 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE T
A
(°C)
0
-55 -40 -20
0
20
40
60
80 100 120
AMBIENT TEMPERATURE T
A
(°C)
6
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE
(sat) (V)
5
4
3
2
1
0
Fig. 3 Collector-Emitter Saturation Voltage
vs. Forward Current
Fig. 4 Forward Current vs. Forward Voltage
(FOD814)
100
FORWARD CURRENT I
F
(mA)
T
A
= 105 C
75 C
o
o
Ic = 0.5mA
1mA
3mA
5mA
7mA
Ta = 25°C
10
50 C
o
25
o
C
0
o
C
1
-30 C
-55 C
o
o
0
2.5
5.0
7.5 10.0 12.5
FORWARD CURRENT I
F
(mA)
15.0
0.1
0.5
1.0
1.5
2.0
FORWARD VOLTAGE V
F
(V)
CURRENT TRANSFER RATIO CTR ( %)
Fig. 5 Forward Current vs. Forward Voltage
(FOD817)
100
FORWARD CURRENT I
F
(mA)
T
A
= 110 C
75 C
o
o
Fig. 6 Current Transfer Ratio
vs. Forward Current
140
120
100
80
60
40
20
V
CE
= 5V
Ta= 25°C
FOD817
10
50 C
o
25
o
C
0
o
C
1
-30 C
-55 C
o
o
FOD814
0.1
0.5
1.0
1.5
2.0
0
0. 1 0.2
FORWARD VOLTAGE V
F
(V)
0.5 1 2
5 10 20 50 100
FORWARD CURRENT I
F
(mA)
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
www.fairchildsemi.com
5
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