DRAM MODULE
KMM5368003BSW/BSWG
KMM5368003BSW/BSWG Fast Page Mode
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
GENERAL DESCRIPTION
The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM
high density memory module. The Samsung KMM5368003B
consists of four CMOS 4Mx16bits and two CMOS Quad CAS
4Mx4bits DRAMs in TSOP packages mounted on a 72-pin
glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor
is mounted on the printed circuit board for each DRAM. The
KMM5368003B is a Single In-line Memory Module with edge
connections and is intended for mounting into 72 pin edge
connector sockets.
FEATURES
• Part Identification
- KMM5368003BSW(4K cycles/64ms Ref, TSOP, Solder)
- KMM5368003BSWG(4K cycles/64ms Ref, TSOP, Gold)
• Fast Page Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V±10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1000mil), double sided component
PERFORMANCE RANGE
Speed
-5
-6
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
90ns
110ns
t
PC
35ns
40ns
PIN CONFIGURATIONS
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Symbol
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
A11
Vcc
A8
A9
RAS3
RAS2
DQ26
DQ8
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
DQ17
DQ35
Vss
CAS0
CAS2
CAS3
CAS1
RAS0
RAS1
NC
W
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
Vcc
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
Vss
PIN NAMES
Pin Name
A0 - A11
DQ0 - 35
W
RAS0 - RAS3
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
PRESENCE DETECT PINS (Optional)
Pin
PD1
PD2
PD3
PD4
50NS
NC
Vss
Vss
Vss
60NS
NC
Vss
NC
NC
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U0
KMM5368003BSW/BSWG
RAS0/RAS2
47Ω
CAS0
47Ω
CAS1
RAS
LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ9 - DQ16
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U3
RAS
RAS1/RAS3
LCAS
UCAS
DQ8
DQ9
DQ10
DQ11
OE
DQ12
DQ13
DQ14
W A0-A11 DQ15
UCAS
OE
W A0-A11
RAS
CAS0
CAS1
CAS2
CAS3
W A0-A11
U1
DQ8,17,26,35
DQ0
DQ1
DQ2
DQ3
DQ0
DQ1
DQ2
DQ3
U4
RAS
CAS0
CAS1
CAS2
CAS3
W A0-A11
DQ18 - DQ25
RAS
47Ω
CAS2
47Ω
CAS3
UCAS
LCAS
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
U2
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ27 - DQ34
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
U5
RAS
LCAS
DQ8
DQ9
DQ10
DQ11
OE
DQ12
DQ13
DQ14
W A0-A11 DQ15
UCAS
OE
W A0-A11
W
A0-A11
Vcc
0.1 or 0.22uF Capacitor
for each DRAM
Vss
To all DRAMs
DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN
, V
OUT
V
CC
T
stg
P
d
I
OS
KMM5368003BSW/BSWG
Rating
-1 to +7.0
-1 to +7.0
-55 to +125
6
50
Unit
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to V
SS
, T
A
= 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC*1
0.8
Unit
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns, which is measured at V
CC
.
*2 : -2.0V at pulse width≤20ns, which is measured at V
SS
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
V
OL
Speed
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
Don′t care
Don′t care
KMM5368003BSW/BSWG
Min
-
-
Max
336
306
12
336
306
226
196
6
336
306
10
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
-
-
-
-
-10
-10
2.4
-
I
CC1
: Operating Current * (RAS, CAS, Address cycling @
t
RC
=min)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
: RAS Only Refresh Current * (CAS=V
IH
, RAS cycling @
t
RC
=min)
I
CC4
: Fast Page Mode Current * (RAS=V
IL
, CAS cycling :
t
PC
=min)
I
CC5
: Standby Current (RAS=CAS=W=Vcc-0.2V)
I
CC6
: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @
t
RC
=min)
I(
IL)
: Input Leakage Current (Any input 0≤V
IN
≤Vcc+0.5V,
all other pins not under test=0 V)
I(
OL)
: Output Leakage Current(Data Out is disabled, 0V≤V
OUT
≤Vcc)
V
OH
: Output High Voltage Level (I
OH
= -5mA)
V
OL
: Output Low Voltage Level (I
OL
= 4.2mA)
* NOTE
: I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
and I
CC3
, address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Fast page mode cycle time,
t
PC
.
DRAM MODULE
CAPACITANCE
(T
A
= 25°C, V
CC
=5V, f = 1MHz)
Item
Input capacitance[A0-A11]
Input capacitance[W]
Input capacitance[RAS0/RAS2, RAS1/RAS3]
Input capacitance[CAS0 - CAS3]
Input/Output capacitance[DQ0 - 35]
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
KMM5368003BSW/BSWG
Min
-
-
-
-
-
Max
40
52
31
24
24
Unit
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=5.0V±10%. See notes 1,2.)
Test condition : V
ih
/V
il
=2.6/0.8V, V
oh
/V
ol
=2.4/0.4V, output loading CL=100pF
Parameter
Random read or write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay
Transition time(rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold referenced to CAS
Read command hold referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Data hold time
Refresh period
Write command set-up time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Symbol
-5
Min
90
50
13
25
0
0
1
30
50
13
50
13
20
15
5
0
10
0
10
25
0
0
0
10
10
15
13
0
10
64
0
5
10
5
30
0
5
10
5
35
10K
37
25
10K
13
50
0
0
1
40
60
15
60
15
20
15
5
0
10
0
10
30
0
0
0
10
10
15
15
0
10
64
10K
45
30
10K
15
50
Max
Min
110
60
15
30
-6
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
3
7
9
9
8
8
4
10
3,4,10
3,4,5
3,10
3
6
2
Note
t
RC
t
RAC
t
CAC
t
AA
t
CLZ
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CSR
t
CHR
t
RPC
t
CPA
DRAM MODULE
Test condition : V
ih
/V
il
=2.6/0.8V, V
oh
/V
ol
=2.4/0.4V, output loading CL=100pF
Parameter
Fast page mode cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
Symbol
-5
Min
35
10
50
10
10
200K
Max
KMM5368003BSW/BSWG
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
V
CC
=5.0V±10%. See notes 1,2.)
-6
Min
40
10
60
10
10
200K
Max
Unit
ns
ns
ns
ns
ns
Note
t
PC
t
CP
t
RASP
t
WRP
t
WRH
NOTES
1. An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
2. Input voltage levels are V
ih
/V
il
. V
IH
(min) and V
IL
(max) are ref-
erence levels for measuring timing of input signals. Transi-
tion times are measured between V
IH
(min) and V
IL
(max) and
are assumed to be 5ns for all inputs.
3. Measured with a load equivalent to 2 TTL loads and 100pF.
8. Either
t
RCH
or
t
RRH
must be satisfied for a read cycle.
4. Operation within the
t
RCD
(max) limit insures that
t
RAC
(max)
can be met.
t
RCD
(max) is specified as a reference point only.
If
t
RCD
is greater than the specified
t
RCD
(max) limit, then
access time is controlled exclusively by
t
CAC
.
5. Assumes that
t
RCD
≥
t
RCD
(max).
9. These parameters are referenced to the CAS leading edge in
early write cycles.
10. Operation within the
t
RAD
(max) limit insures that
t
RAC
(max)
can be met.
t
RAD
(max) is specified as reference point only. If
t
RAD
is greater than the specified
t
RAD
(max) limit, then
access time is controlled by
t
AA
.
6. This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
OH
or
V
OL
.
7.
t
WCS
is non-restrictive operating parameter. It is included in
the data sheet as electrical characteristics only. If
t
WCS
≥
t
WCS
(min), the cycle is an early write cycle and the
data out pin will remain high impedance for the duration of
the cycle.
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