DATA SHEET
SILICON TRANSISTOR
2SC4184
UHF OSCILLATOR AND VHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4184 is designed for use as an oscillator or a mixer in a UHF
TV tuners. Super mini mold package makes it suitable for use in small
type equipments especially recommended for Hibrid Integrated Circuits
and other applications.
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
FEATURES
2.0 ± 0.2
0.3
+0.1
–0
• High Gain Bandwidth Product
• Low Feedback Capacitance
: f
T
= 1.8 GHz TYP.
: C
re
= 1.2 pF MAX.
• Low Collector to Base Time Constant : C
C
·
r
b’b
= 3.5 ps TYP.
0.65 0.65
2
0.3
+0.1
–0
0.15
+0.1
–0.05
1
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CB0
V
CE0
V
EB0
I
C
P
T
T
j
T
stg
30
15
4.0
50
160
150
–65 to +150
V
V
V
mA
mW
˚
C
˚
C
0.9 ± 0.1
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Characteristics
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Feedback Capacitance
Collector to Base Time Constant
Symbol
I
CB0
h
FE
V
CE(sat)
f
T
C
re
C
C
·r
b’b
1.2
1.8
0.55
3.5
1.2
8.0
40
100
MIN.
TYP.
MAX.
0.1
200
0.5
V
GHz
pF
ps
Unit
Test Conditions
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
V
CE
= 3 V, I
C
= 5 mA
V
CB
= 3 V, I
E
= 0, f = 1 MHz
V
CE
= 3 V, I
E
= –5 mA, f = 31.9 MHz
µ
A
h
FE
Classifications
Rank
Marking
h
FE
T42
T42
40 to 80
T43
T43
60 to 120
T44
T44
100 to 200
Document No. P11189EJ2V0DS00 (2nd edition)
(Previous No. TP-2253)
Date Published February 1996 P
Printed in Japan
0 to 0.1
©
1996
2SC4184
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
C
re
- Feed-back Capacitance - pF
P
T
- Total Power Dissipation - W
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
3
f = 1.0 MHz
2
Free Air
150
1
0.7
0.5
0.3
0.2
100
50
0
50
100
150
T
A
- Ambient Temperature - ˚C
0.1
1
2
3
5 7
10
20
V
CB
- Collector to Base Voltage - V
30
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
G
max
- Maximum Available Gain - dB
S
21e
2
- Insertion Gain - dB
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
15 V
CE
= 10 V
f = 1.0 GHz
MAG
10
V
CE
= 10 V
h
FE
- DC Current Gain
100
50
S
21e
2
5
20
10
0.5
1
5
10
I
C
- Collector Current - mA
50
0
0.5
1
5
10
I
C
- Collector Current - mA
50 70
10
f
T
- Gain Bandwidth Product - MHz
C
C
·r
b
·
b
- Collector to Base Time Constant - ps
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
COLLECTOR TO BASE TIME
CONSTANT vs. COLLECTOR CURRENT
15
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.1
V
CE
= 10 V
0.5 1.0
5.0 10
30
I
C
- Collector Current - mA
10
5
0
0.5
V
CE
= 10 V
f = 31.9 MHz
1
5
10
I
C
- Collector Current - mA
50 70
2
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