RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
| Parameter Name | Attribute value |
| Maker | FUJITSU |
| package instruction | FLANGE MOUNT, R-CDFM-F2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | HIGH RELIABILITY |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 15 V |
| Maximum drain current (Abs) (ID) | 1.8 A |
| Maximum drain current (ID) | 1.3 A |
| FET technology | JUNCTION |
| highest frequency band | C BAND |
| JESD-30 code | R-CDFM-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | DEPLETION MODE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 21 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
