5962-01-366-7470 datasheet, PDF

5962-01-366-7470: DescriptionStandard SRAM, 32KX8, 120ns, CMOS, PDIP28,; Categorystorage storage; File Size414KB，5 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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5962-01-366-7470 Overview

Standard SRAM, 32KX8, 120ns, CMOS, PDIP28,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1164069998
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	120 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T28
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum standby current	0.00005 A
Minimum standby current	2 V
Maximum slew rate	0.07 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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