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MT9VDDF6472G-40BF1

Description
module ddr sdram 512mb 184-dimm
Categorystorage   
File Size537KB,30 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
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MT9VDDF6472G-40BF1 Overview

module ddr sdram 512mb 184-dimm

256MB, 512MB (x72, ECC, SR) PC3200
184-PIN DDR SDRAM RDIMM
DDR SDRAM
REGISTERED DIMM
Features
184-pin, dual in-line memory module (DIMM)
Fast data transfer rates: PC3200
Utilizes 400 MT/s DDR SDRAM components
Registered Inputs with one-clock delay
Phase-lock loop (PLL) clock driver to reduce loading
Supports ECC error detection and correction
256MB (32 Meg x 72) and 512MB (64 Meg x 72)
V
DD
= V
DDQ
= +2.6V
V
DDSPD
= +2.3V to +3.6V
2.5V I/O (SSTL_2 compatible)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
Differential clock inputs CK and CK#
Four internal device banks for concurrent operation
Programmable burst lengths: 2, 4, or 8
Auto precharge option
Auto Refresh and Self Refresh Modes
7.8125µs maximum average periodic refresh
interval
Serial Presence-Detect (SPD) with EEPROM
Programmable READ CAS latency
Gold edge contacts
MT9VDDF3272 – 256MB
MT9VDDF6472 – 512MB
For the latest data sheet, please refer to the Micron
Web
site:
www.micron.com/products/modules
Figure 1: 184-Pin DIMM (MO-206)
Low-Profile 1.125in. (28.58mm)
Very Low-Profile 0.72in. (18.29mm)
OPTIONS
MARKING
• Package
184-pin DIMM (standard)
184-pin DIMM (lead-free)
• Memory Clock, Speed, CAS Latency
2
5ns (200 MHz), 400 MT/s, CL = 3
• PCB
Low-Profile 1.125in. (28.58mm)
Very Low-Profile 0.72in. (18.29mm)
NOTE:
G
Y
-40B
1. Consult Micron for product availability.
2. CL = CAS (READ) Latency; registered mode will
add one clock cycle to CL.
Table 1:
Address Table
256MB
512MB
8K
8K (A0–A12)
4 (BA0, BA1)
512Mb (64 Meg x 8)
2K (A0–A9, A11)
1 (S0#)
8K
8K (A0–A12)
4 (BA0, BA1)
256Mb (32 Meg x 8)
1K (A0–A9)
1 (S0#)
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
1
©2004 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.

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Description module ddr sdram 512mb 184-dimm module ddr sdram 256mb 184-dimm module ddr sdram 512mb 184-dimm

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