IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
High-speed access time: 8, 10, 12, and 15 ns
CMOS low power operation
TTL and CMOS compatible interface levels
Single 3.3V ± 10% power supply
Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
•
•
•
•
•
ISSI
DESCRIPTION
®
NOVEMBER 2000
The
ISSI
IS61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using
ISSI
's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs,
CE
and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV12816 is packaged in the JEDEC standard 44-pin
400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini
BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16
MEMORY ARRAY
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
1
IS61LV12816
PIN DESCRIPTIONS
A0-A16
I/O0-I/O15
CE
OE
WE
LB
UB
NC
Vcc
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
ISSI
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to + 70°C
Industrial
–40°C to + 85°C
V
CC
3.3V ± 10%
3.3V ± 10%
®
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
STG
T
BIAS
P
T
I
OUT
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Com.
Ind.
Power Dissipation
DC Output Current
Value
–0.5 to 5.0
–0.5 to Vcc + 0.5
–65 to + 150
–10 to + 85
–45 to + 90
2.0
±20
Unit
V
V
°C
°C
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND - V
IN
- V
CC
GND - V
OUT
- V
CC
, Outputs Disabled
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
CC
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns).
V
IH
(max.) = V
CC
+ 0.3V DC; V
IH
(max.) = V
CC
+ 2.0V AC (pulse width - 2.0 ns).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
3
IS61LV12816
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
ISSI
Vcc Current
I
SB
1
, I
SB
2
I
CC
I
CC
®
Write
I
CC
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
I
SB
1
Parameter
Vcc Operating
Supply Current
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
Test Conditions
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
• V
IH
, f = max
V
CC
= Max.,
CE
- V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V, or
V
IN
- 0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
-8 ns
Min. Max.
—
—
—
—
—
—
150
160
50
60
10
20
-10 ns
Min. Max.
—
—
—
—
—
—
125
135
40
50
10
20
-12 ns
Min. Max.
—
—
—
—
—
—
110
120
35
45
10
20
-15 ns
Min. Max.
—
—
—
—
—
—
90
100
30
40
10
20
Unit
mA
mA
I
SB
2
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
IS61LV12816
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
ISSI
®
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
-8 ns
Min. Max
8
—
3
8
—
—
0
0
3
—
0
0
—
8
—
—
3
3
—
3
—
3
3
—
-10 ns
Min. Max.
10
—
3
—
—
—
0
0
3
—
0
0
—
10
—
10
4
4
—
4
—
4
4
—
-12 ns
Min.
Max.
12
—
3
—
—
—
0
0
3
—
0
0
—
12
—
12
5
5
—
5
—
5
5
—
-15 ns
Min.
Max.
15
—
3
—
—
0
0
0
3
—
0
0
—
15
—
15
6
6
—
8
—
6
6
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
OE
to High-Z Output
t
LZOE
(2)
OE
to Low-Z Output
t
HZCE
(2)
CE
to High-Z Output
t
LZCE
(2)
CE
to Low-Z Output
t
BA
t
HZB
(2)
t
LZB
(2)
LB, UB
Access Time
LB, UB
to High-Z Output
LB, UB
to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels
of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
3.3V
319
Ω
3.3V
319
Ω
OUTPUT
30 pF
Including
jig and
scope
353
Ω
OUTPUT
5 pF
Including
jig and
scope
353
Ω
Figure 1.
Figure 2.
5
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
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