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IW4011BD

Description
Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
File Size110KB,4 Pages
ManufacturerETC
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IW4011BD Overview

Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS

TECHNICAL DATA
IW4011B
Quad 2-Input NAND Gate
High-Voltage Silicon-Gate CMOS
The IW4011B NAND gates provide the system designer with
direct emplementation of the NAND function.
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1
µA
at 18 V over full package-
temperature range; 100 nA at 18 V and 25°C
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
ORDERING INFORMATION
IW4011BN Plastic
IW4011BD SOIC
T
A
= -55° to 125° C for all packages
LOGIC DIAGRAM
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
A
L
PIN 14 =V
CC
PIN 7 = GND
L
H
H
B
L
H
L
H
Output
Y
H
H
H
L
11

IW4011BD Related Products

IW4011BD IW4011B IW4011BN
Description Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS

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