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FDFME2P823ZT Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
July 2010
FDFME2P823ZT
Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
-20 V, -2.6 A, 142 mΩ
Features
Max r
DS(on)
= 142 mΩ at V
GS
= -4.5 V, I
D
= -2.3 A
Max r
DS(on)
= 213 mΩ at V
GS
= -2.5 V, I
D
= -1.8 A
Max r
DS(on)
= 331 mΩ at V
GS
= -1.8 V, I
D
= -1.5 A
Max r
DS(on)
= 530 mΩ at V
GS
= -1.5 V, I
D
= -1.2 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6
Thin
Schottky:
V
F
< 0.57 V @ 1A
Free from halogenated compounds and antimony oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable appliacrions. It features as MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum condution losses.
The MicroFET 1.6x1.6
Thin
package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
Battery Charging
DC-DC Conversion
D
NC
A
Pin 1
K
S
G
K
D
A 1
NC 2
D 3
TOP
MicroFET 1.6x1.6 Thin
6 K
5 G
4 S
BOTTOM
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
V
RRM
I
O
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
(Note 4)
T
A
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 1b)
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
-20
±8
-2.6
-6
1.4
0.6
28
1
-55 to +150
Units
V
V
A
W
V
A
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJA
R
θJA
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
90
195
110
234
°C/W
Package Marking and Ordering Information
Device Marking
3T
Device
FDFME2P823ZT
Package
MicroFET 1.6x1.6
Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
FDFME2P823ZT Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250
μA,
V
GS
= 0 V
I
D
= -250
μA,
referenced to 25 °C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= ±8 V, V
DS
= 0 V
-20
-12
-1
±10
V
mV/°C
μA
μA
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μA
I
D
= -250
μA,
referenced to 25 °C
V
GS
= -4.5 V, I
D
= -2.3 A
V
GS
= -2.5 V, I
D
= -1.8 A
r
DS(on)
Drain to Source On Resistance
V
GS
= -1.8 V, I
D
= -1.5 A
V
GS
= -1.5 V, I
D
= -1.2 A
V
GS
= -4.5 V, I
D
= -2.3 A,
T
J
= 125 °C
g
FS
Forward Transconductance
V
DS
= -4.5 V, I
D
= -2.3 A
-0.4
-0.6
2
95
120
150
190
128
7
142
213
331
530
190
S
mΩ
-1.0
V
mV/°C
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0 V,
f = 1 MHz
305
55
50
405
75
75
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= -10 V, I
D
= -2.3 A,
V
GS
= -4.5 V
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
4.7
4.8
33
16
5.5
0.6
1.4
10
10
53
29
7.7
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= -0.9 A
(Note 2)
-0.8
16
4.4
-1.2
29
10
V
ns
nC
I
F
= -2.3 A, di/dt = 100 A/μs
Schottky Diode Characteristics
I
R
V
F
V
F
Reverse Leakage
Forward Voltage
Forward Voltage
V
R
= 28 V
I
F
= 1 A
I
F
= 500 mA
T
J
= 25 °C
T
J
= 85 °C
T
J
= 25 °C
T
J
= 85 °C
T
J
= 25 °C
T
J
= 85 °C
15
0.46
0.47
0.45
0.38
0.33
0.48
100
4.7
0.57
μA
mA
V
V
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
2
www.fairchildsemi.com
FDFME2P823ZT Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
Electrical Characteristics
Notes:
1. R
θJA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θJA
is determined by the
user's board design.
(a) MOSFET R
θJA
= 90 °C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB.
(b) MOSFET R
θJA
= 195 °C/W when mounted on a minimum pad of 2 oz copper.
(c) Schottky R
θJA
= 110 °C/W when mounted on a 1 in
2
pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB.
(d) Schottky R
θJA
= 234 °C/W when mounted on a minimum pad of 2 oz copper.
a. 90 °C/W when mounted on
a 1 in
2
pad of 2 oz copper.
b. 195 °C/W when mounted on a
minimum pad of 2 oz copper.
c. 110 °C/W when mounted on
a 1 in
2
pad of 2 oz copper.
d. 234 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300
μs,
Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
4. Rating is applicable to MOSFET only.
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
3
www.fairchildsemi.com
FDFME2P823ZT Integrated P-Channel PowerTrench
®
MOSFET and Schottky Diode
Typical Characteristics
T
J
= 25°C unless otherwise noted
6
V
GS
= -3 V
-I
D
,
DRAIN CURRENT (A)
V
GS
= -2.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3
V
GS
= -4.5 V
V
GS
= -1.5 V
4
V
GS
= - 1.8 V
2
V
GS
= -1.8 V
V
GS
= -2.5 V
V
GS
= -3 V
2
V
GS
= -1.5 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -4.5 V
0
0
0
0
2
-I
D
,
DRAIN CURRENT (A)
0.5
1.0
1.5
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
2.0
4
6
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.4
1.2
1.0
0.8
0.6
-75
r
DS(on),
DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
I
D
= -2.3 A
V
GS
= -4.5 V
500
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
400
I
D
= -2.3 A
300
200
100
T
J
= 25
o
C
T
J
= 125
o
C
-50
-25
0
25 50 75 100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
6
-I
S
, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
-I
D
, DRAIN CURRENT (A)
V
DS
= -5 V
1
T
J
= 150
o
C
4
0.1
T
J
=
150
o
C
T
J
= 25
o
C
2
T
J
= 25
o
C
T
J
= -55
o
C
0.01
T
J
= -55
o
C
0
0.0
0.5
1.0
1.5
2.0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation
FDFME2P823ZT Rev.C1
4
www.fairchildsemi.com
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