技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FS75R12KE3_B9
初步数据
PreliminaryData
V
CES
1200
75
105
150
355
+/-20
min.
I
C
= 75 A, V
GE
= 15 V
I
C
= 75 A, V
GE
= 15 V
I
C
= 3,00 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 4,7
Ω
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 4,7
Ω
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 4,7
Ω
I
C
= 75 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 4,7
Ω
I
C
= 75 A, V
CE
= 600 V, L
S
= 70 nH
V
GE
= ±15 V, di/dt = 2200 A/µs
R
Gon
= 4,7
Ω
I
C
= 75 A, V
CE
= 600 V, L
S
= 70 nH
V
GE
= ±15 V, du/dt = 3200 V/µs
R
Goff
= 4,7
Ω
V
GE
≤
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
每个IGBT/perIGBT
每个IGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
t
d on
5,0
typ.
1,70
2,00
5,8
0,70
10
5,30
0,20
0,26
0,29
0,03
0,05
0,42
0,52
0,07
0,09
5,00
7,50
6,50
9,50
max.
2,15
6,5
1,0
100
V
V
V
µC
Ω
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
V
A
A
IGBT,逆变器/IGBT,Inverter
集电极－发射极电压
Collector-emittervoltage
连续集电极直流电流
ContinuousDCcollectorcurrent
集电极重复峰值电流
Repetitivepeakcollectorcurrent
总功率损耗
Totalpowerdissipation
栅极－发射极峰值电压
Gate-emitterpeakvoltage
最大额定值/MaximumRatedValues
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
I
CRM
P
tot
V
GES
A
W
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
栅极阈值电压
Gatethresholdvoltage
栅极电荷
Gatecharge
内部栅极电阻
Internalgateresistor
输入电容
Inputcapacitance
反向传输电容
Reversetransfercapacitance
集电极-发射极截止电流
Collector-emittercut-offcurrent
栅极-发射极漏电流
Gate-emitterleakagecurrent
开通延迟时间(电感负½½)
Turn-ondelaytime,inductiveload
上升时间(电感负½½)
Risetime,inductiveload
关断延迟时间(电感负½½)
Turn-offdelaytime,inductiveload
下降时间(电感负½½)
Falltime,inductiveload
开通损耗½量(每脉冲)
Turn-onenergylossperpulse
关断损耗½量(每脉冲）
Turn-offenergylossperpulse
短路数据
SCdata
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
t
r
t
d off
t
f
E
on
E
off
I
SC
R
thJC
R
thCH
T
vj op
-40
t
P
≤
10 µs, T
vj
= 125°C
300
0,21
A
0,35 K/W
K/W
125
°C
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FS75R12KE3_B9
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Repetitivepeakreversevoltage
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
I2t-值
I²t-value
最大额定值/MaximumRatedValues
T
vj
= 25°C
t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
V
RRM
I
F
I
FRM
I²t
min.
I
F
= 100 A, V
GE
= 0 V
I
F
= 100 A, V
GE
= 0 V
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM
1200
100
200
1950
typ.
1,65
1,65
50,0
60,0
9,00
18,5
3,50
6,50
0,285
125
max.
2,15
V
V
A
A
µC
µC
mJ
mJ
V
A
A
A²s
特征值/CharacteristicValues
正向电压
Forwardvoltage
反向恢复峰值电流
Peakreverserecoverycurrent
恢复电荷
Recoveredcharge
反向恢复损耗（每脉冲）
Reverserecoveryenergy
结－外壳热阻
Thermalresistance,junctiontocase
外壳－散热器热阻
Thermalresistance,casetoheatsink
在开关状态下温度
Temperatureunderswitchingconditions
I
F
= 100 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 100 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 100 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 600 V
T
vj
= 125°C
V
GE
= -15 V
每个二极管/perdiode
每个二极管/perdiode
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
Q
r
E
rec
R
thJC
R
thCH
T
vj op
-40
0,48 K/W
K/W
°C
模块/Module
绝缘测试电压
Isolationtestvoltage
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
爬电距离
Creepagedistance
电气间隙
Clearance
相对电痕指数
Comperativetrackingindex
外壳－散热器热阻
Thermalresistance,casetoheatsink
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
重量
Weight
preparedby:CM
approvedby:RS
RMS, f = 50 Hz, t = 1 min.
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
每个模块/permodule
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
T
C
=25°C,每个开关/perswitch
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
dateofpublication:2013-11-04
revision:2.0
2
V
ISOL
CTI
min.
R
thCH
L
sCE
R
CC'+EE'
T
stg
M
G
-40
3,00
2,5
Cu
Al
2
O
3
10,0
7,5
> 225
typ.
0,02
19
1,80
-
180
125
6,00
max.
K/W
nH
mΩ
°C
Nm
g
kV
mm
mm
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FS75R12KE3_B9
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
T
vj
=125°C
150
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
I
C
=f(V
CE
)
V
GE
=15V
150
135
120
105
90
I
C
[A]
75
60
45
30
15
0
T
vj
= 25°C
T
vj
= 125°C
135
120
105
90
I
C
[A]
75
60
45
30
15
0
V
GE
= 19V
V
GE
= 17V
V
GE
= 15V
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
0,0
0,5
1,0
1,5
2,0
V
CE
[V]
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5 3,0
V
CE
[V]
3,5
4,0
4,5
5,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
I
C
=f(V
GE
)
V
CE
=20V
150
T
vj
= 25°C
T
vj
= 125°C
125
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
E
on
=f(I
C
),E
off
=f(I
C
)
V
GE
=±15V,R
Gon
=4.7Ω,R
Goff
=4.7Ω,V
CE
=600V
20
18
16
14
12
E
on
, T
vj
= 125°C
E
off
, T
vj
= 125°C
100
75
E [mJ]
5
6
7
8
9
V
GE
[V]
10
11
12
I
C
[A]
10
8
50
6
4
2
25
0
0
0
25
50
75
I
C
[A]
100
125
150
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
3
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FS75R12KE3_B9
初步数据
PreliminaryData
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
Z
thJC
=f(t)
1
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
E
on
=f(R
G
),E
off
=f(R
G
)
V
GE
=±15V,I
C
=75A,V
CE
=600V
20
18
16
14
12
10
8
6
4
2
0
E
on
, T
vj
= 125°C
E
off
, T
vj
= 125°C
Z
thJC
: IGBT
Z
thJC
[K/W]
E [mJ]
0,1
i:
1
2
3
4
r
i
[K/W]: 0,021 0,1155 0,112 0,1015
τ
i
[s]:
0,01 0,02
0,05 0,1
0
10
20
R
G
[Ω]
30
40
50
0,01
0,001
0,01
0,1
t [s]
1
10
反偏安全工½区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
I
C
=f(V
CE
)
V
GE
=±15V,R
Goff
=4.7Ω,T
vj
=125°C
175
I
C
, Modul
I
C
, Chip
150
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
I
F
=f(V
F
)
200
180
160
T
vj
= 25°C
T
vj
= 125°C
125
140
120
I
F
[A]
100
80
60
40
100
I
C
[A]
75
50
25
20
0
0
0
200
400
600
800
V
CE
[V]
1000
1200
1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
V
F
[V]
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.0
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FS75R12KE3_B9
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
E
rec
=f(R
G
)
I
F
=100A,V
CE
=600V
8
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
E
rec
=f(I
F
)
R
Gon
=4.7Ω,V
CE
=600V
10
E
rec
, T
vj
= 125°C
9
8
E
rec
, T
vj
= 125°C
7
6
7
6
E [mJ]
5
4
3
2
2
1
0
1
0
E [mJ]
0
20
40
60
80
100 120 140 160 180 200
I
F
[A]
5
4
3
0
5
10
15
20
25
R
G
[Ω]
30
35
40
45
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
Z
thJC
=f(t)
1
Z
thJC
: Diode
Z
thJC
[K/W]
0,1
i:
1
2
3
4
r
i
[K/W]: 0,0288 0,1584 0,1536 0,1392
τ
i
[s]:
0,01
0,02
0,05
0,1
0,01
0,001
preparedby:CM
approvedby:RS
0,01
0,1
t [s]
1
10
dateofpublication:2013-11-04
revision:2.0
5
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