DATA SHEET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
• Low Noise Figure
• High Power Gain
• Enhancement Typ.
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
(1.8)
0.85 0.95
NF = 2.0 dB TYP. (@ = 900 MHz)
G
ps
= 17.5 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS
(Unit: mm)
0.4
−0.05
0.4
−0.05
0.16
5°
+0.1
−0.06
2.8
−0.3
1.5
−0.1
2
+0.2
+0.1
+0.1
+0.2
• Small Package : 4 Pins Mini Mold Package. (SC-61)
2.9±0.2
3
4
5°
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*R
L
10 k
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
V
0.6
−0.05
8 (
10)*
8 (
10)*
18
18
25
200
125
V
+0.2
−3.1
5°
V
V
mA
mW
1.1
0.8
55 to +125
C
C
5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage
due to those voltages or fields.
Document No. P10588EJ2V0DS00 (2nd edition)
(Previous No. TC-2283)
Date Published March 1997 N
Printed in Japan
©
0.4
−0.05
+0.1
+0.1
V
1
(1.9)
1993
3SK231
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
Gate2 Reverse Current
Forward Transfer Admittance
SYMBOL
BV
DSX
I
DSx
V
G1S(off)
V
G2S(off)
I
G1SS
I
G2SS
MIN.
18
0.01
10.0
+1.0
+1.1
+1.6
TYP.
MAX.
UNIT
V
mA
V
V
nA
nA
mS
TEST CONDITIONS
V
G1S
= V
G2S
=
2 V, I
D
= 10
A
V
DS
= 6 V, V
G2S
= 4.5 V, V
G1S
= 0.75 V
V
DS
= 6 V, V
G2S
= 3 V, I
D
= 10
A
V
DS
= 6 V V
G1S
= 3 V, I
D
= 10
A
V
DS
= V
G2S
= 0 V, V
G1S
=
8 V
V
DS
= V
G1S
= 0 V, V
G2S
=
8 V
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 kHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
C
iss
C
oss
C
rss
G
ps
NF1
14.0
1.0
0.7
1.5
1.0
0.015
17.5
2.0
2.0
1.3
0.03
21.0
3.0
pF
pF
pF
dB
dB
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 900 MHz
V
DS
= 6 V, V
G2S
= 4.5 V, I
D
= 10 mA
f = 1 MHz
1.0
+0.6
20
20
15
19.5
24
y
fs
I
DSX
Classification
Rank
Marking
I
DSX
(mA)
U1C
U1C
0.01 to 4.0
U1D
U1D
2.0 to 10.0
2
3SK231
CHARACTERISTICS CURVE (T
A
= 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-Total Power Dissipation-mW
Free Air
400
I
D
-Drain Current-mA
40
30
20
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 V
G2S
= 4.5 V
V
G1S
= 3 V
2.5V
2.0V
1.5V
1.0V
0.5V
0
25
50
75
100
125
0
5
V
DS
-Drain to Source Voltage-V
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
|y
fs
|-Forward Transfer Admittance-mS
25
20
15
10
5
0
-1
2V
3V
V
DS
= 6 V
f = 1 KHz
V
G2S
= 5 V
10
300
200
100
T
A
-Ambient Temperature-°C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25
I
D
-Drain Current-mA
20
15
10
2.0 V
5
1.5 V
0
-1
0
1
2
3
4
V
DS
= 6 V
V
G2S
= 3.5 V
3.0 V
2.5 V
4V
0
1
2
3
4
V
G1S
-Gate1 to Source Voltage-V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
|y
fs
|-Forward Transfer Admittance-mS
40
32
24
16
8
0
2V
8
V
G2S
= 6 V
5V
4V
3V
V
DS
= 6 V
f = 1 KHz
5V
C
iss
-Input Capacitance-pF
V
G1S
-Gate1 to Source Voltage-V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4.5 V)
2.0
f = 1 MHz
1.5
1.0
0.5
4
12
16
20
0
1.0
2.0
3.0
4.0
5.0
I
D
-Drain Current-mA
V
G2S
-Gate2 to Source Voltage-V
3
3SK231
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
2.5
I
D
= 10 mA
(at V
DS
= 6 V
2.0 V
G2S
= 4.5 V)
f = 1 MHz
1.5
10
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
f = 900 MHz
20 I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4.5 V)
10
G
ps
C
oss
-Output Capacitance-pF
NF-Noise Figure-dB
G
ps
-Power Gain-dB
5
0
1.0
−10
−20
0.5
NF
0
1.0
2.0
3.0
4.0
5.0
0
0
1.0
2.0
3.0
4.0
5.0
V
G2S
-Gate2 to Source Voltage-V
V
G2S
-Gate2 to Source Voltage-V
4
3SK231
Gps AND NF TEST CIRCUIT AT f = 900 MHz
V
G2S
(3 V)
1000 pF
47 kΩ
1000 pF
to 10 pF
to 10 pF
INPUT
50
Ω
to 10 pF
to 10 pF
L
1
47 kΩ
RFC
L
2
OUTPUT
50
Ω
1000 pF
1000 pF
L
1
, L
2
; 35
×
5
×
0.2 mm
V
DD
(6 V)
V
G1S
5
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